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The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si0.7Ge0.3

  • G. Patrick Watson, Don Monroe, J-Y Cheng, Eugene A. Fitzgerald, Ya-Hong Xie and R. Bruce Vandover (a1)...

Abstract

Co(SiGe)x contacts have been formed on low defect density, relaxed Si0.7Ge0.3 layers by conventional self-aligned contact processing techniques. Test structures measuring the contact metal sheet resistance indicate that the resistivity is high for anneal temperatures from 450°C to 750°C. The lowest sheet resistivity was 100 Ω/□, about 10 times the resistivity of a comparable amount of CoSi2. Contact resistivities, measured by the transmission line method, were as low as 2 × 10−5 Ω cm2. There is a large discrepancy between contact resistivities measured by transmission line and 4 point Kelvin test structures that may be due to the fabricated contact sizes.

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1. Ridgway, M. C., Elliman, R. G., Hauser, N., Baribeau, J.-M., and Jackman, T. E., MRS Symposium Proceedings, 260 857 (1992).
2. Ashburn, S. P., Ozturk, M. C., Wortman, J. J., Harris, G., Honeycut, J., and Maher, D. M., J. Electronic Mater., 21 81 (1992).
3. Ashburn, S. P., Ozturk, M. C., Harris, G., and Maher, D. M., J. Appl. Phys., 74 4455 (1993).
4. Watson, G. P., Fitzgerald, E. A., Jalali, B., Xie, Y. H., Weir, B., and Feldman, L. C., MRS Symposium Proceedings, 303 15 (1993).
5. Watson, G. P., Monroe, D., Cheng, J., Xie, Y. H., and Fitzgerald, E. A., unpublished.
6. Schroder, D. K., “Semiconductor Material and Device Characterization”, J. Wiley and Sons, Inc. (1990).
7. Proctor, S. J., Linholm, L. W., and Mazer, J. A., IEEE Trans. Electron Dev. ED–30 1535 (1983).

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