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Characterization of AlGaN-based GRINSCH Using TEM and Electron Holography
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- Journal:
- Microscopy and Microanalysis / Volume 19 / Issue S2 / August 2013
- Published online by Cambridge University Press:
- 09 October 2013, pp. 1382-1383
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- August 2013
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Galaxy spectra from the UV to the mid-IR
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- Proceedings of the International Astronomical Union / Volume 8 / Issue S295 / August 2012
- Published online by Cambridge University Press:
- 17 July 2013, pp. 286-289
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- August 2012
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Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons
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- MRS Online Proceedings Library Archive / Volume 1294 / 2011
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- 04 February 2011, mrsf10-1294-m05-10
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- 2011
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Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y6.10
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- 2003
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Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L5.7
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- 2002
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Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.20
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- 2002
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Nitrogen Gas-Cluster Ion Beam – A New Nitrogen Source for GaN Growth
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.10
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- 2002
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Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L6.34
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- 2002
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High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 28-34
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- 2000
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High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
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- 03 September 2012, F99W1.8
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- 1999
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Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
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- 10 February 2011, 427
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- 1999
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Phase Separation and Ordering in InGaN alloys
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
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- 10 February 2011, 431
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- 1998
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Electron Mobility of N-Type GaN Films
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 507
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- 1997
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Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 51
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- 1997
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Near Band Gap Photoluminescence Broadening In n-Gan Films
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 655
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- 1997
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Phase Separation and Atomic Ordering in AlGaInN Alloys
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 193
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- 1997
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Metal Contacts to n- AlXGa1-xN
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 1095
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- 1997
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The Effect Of Si And Mg Doping In The Microstructure Of Epitaxially Grown Gan
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 381
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- 1997
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Investigation of Vacancies in GaN by Positron Annihilation
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 853
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- 1996
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Determination of the Percentage of the Cubic and Hexagonal Phases in Gan with Nexafs
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 411
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- 1996
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