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Investigation of Vacancies in GaN by Positron Annihilation

Published online by Cambridge University Press:  10 February 2011

L. V. JØrgensen ,
A. C. Kruseman ,
H. Schut ,
A. Van Veen ,
M. Fanciulli  and
T. D. Moustakas
L. V. JØrgensen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, 2629 JB Delft, Netherlands
A. C. Kruseman
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, 2629 JB Delft, Netherlands
H. Schut
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, 2629 JB Delft, Netherlands
A. Van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, 2629 JB Delft, Netherlands
M. Fanciulli
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark
T. D. Moustakas
Affiliation:
Department of ECS, Boston University, Boston, MA 02215
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Abstract

Positron beam analysis has been performed on autodoped n-type, semi-insulating and Mg doped p-type epitaxially grown layers of GaN on sapphire. Doppler Broadening measurements clearly indicate the presence of vacancies in the intrinsically autodoped n-type GaN by an increase in the annihilation Doppler lineshape S-parameter of 1.04 relative to the value for the high resistivity sample. This value is typical for vacancy-type defects in compound semiconductors such as GaAs. Results of experiments with higher sensitivity to core-electrons are also presented. These two detector coincidence measurements yield information on the chemical environment surrounding the vacancies. The results are consistent with the presence of Ga vacancies in the autodoped n-type sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 853
Copyright
Copyright © Materials Research Society 1997

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References

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