11 results
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
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- Journal:
- The European Physical Journal - Applied Physics / Volume 45 / Issue 2 / February 2009
- Published online by Cambridge University Press:
- 31 January 2009, 20305
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- February 2009
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Characterization of the blue emission of Tm/Er co-implanted GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF23-13
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- 2005
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF24-03
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- 2005
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High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.49
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- 2003
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Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.48
- Print publication:
- 2003
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Processing of rare earth doped GaN with ion beams
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.5
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- 2003
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Raman study of resonance effects in Ga1−xAlxN solid solutions
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e52
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- 1998
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Raman study of Ga1−xAlxN solid solutions
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e40
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- 1997
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Radiative And Nonradiative Relaxation Of Excitons In GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 637
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- 1997
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Comparison of Luminescence and Physical Morphologies of GaN Epilayers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e31
- Print publication:
- 1997
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MOVPE Growth and Structural Characterization of AlxGa1−xN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e27
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- 1997
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