Skip to main content Accessibility help
×
Home

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

  • Emilio Nogales (a1), K. Lorenz (a2), K. Wang (a3), I.S. Roqan (a4), R.W. Martin (a5), K.P. O'Donnell (a6), E. Alves (a7), S. Ruffenach (a8) and O. Briot (a9)...

Abstract

Integrated AlN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 °C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the 5D07F2 transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

Copyright

References

Hide All
[1] Steckl, A.J., Heikenfeld, J.C., Lee, D.-S., Garter, M.J., Baker, C.C., Wang, Y. and Jones, R., IEEE J. Sel. Top. Quantum Electon. 8, 749 (2002)
[2] Favennec, P. N., Haridon, H. L., Salvi, M., Muotonnet, D., and Le Guillo, Y., Electron. Lett. 25, 718 (1989)
[3] Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R.W., O'Donnell, K.P., Ruffenach, S. and Briot, O., Appl. Phys. Lett. 85, 2712 (2004)
[4] Fellows, J.A., Yeo, Y.K., Ryu, M.-Y., Hengehold, R.L., Solid State Communications 133, 213 (2005)
[5] Zolper, J.C., Han, J., Biefeld, R.M., Van Deusen, S.B., Wampler, W.R., Reiger, D.J., Pearton, S.J., Williams, J.S., Tan, H.H., Karlicek, R.F. Jr., Stall, R.A., J. Electron. Mater. 27, 179 (1998)
[6] Nogales, E., Martin, R.W., O'Donnell, K.P., Lorenz, K., Alves, E., Ruffenach, S. and Briot, O., Appl. Phys. Lett. (accepted for publication)
[7] Martin, R.W., Edwards, P.R., O'Donnell, K.P., Mackay, E.G., and Watson, I.M., phys. stat. sol. (a) 192, 117 (2002)
[8] Bellet-Amalric, E., Adelmann, C., Sarigiannidou, E., Rouvière, J.L., Feuillet, G., Monroy, E. and Daudin, B., J. Appl. Phys. 95, 1127 (2004)
[9] Scanning electron microscopy and X-Ray microanalysis, Goldstein, J.I., Newbury, D.E., Echlin, P., Joy, D.C., Roming, A.D., Lyman, C.E., Fiori, C. and Lifshin, E., Plenum, New York (1992)
[10] Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R. and Steckl, A. J., Appl. Phys. Lett. 75, 1189 (1999)
[11] Katchkanov, V., O'Donnell, K. P., Dalmasso, S., Martin, R. W., Braud, A., Nakanishi, Y., Wakahara, A., and Yoshida, A., phys. stat. sol. (b) 242, 1491 (2005)
[12] Wang, K., Martin, R.W., O'Donnell, K.P., Katchkanov, V., Nogales, E., Lorenz, K., Alves, E., Ruffenach, S., Briot, O., Appl. Phys. Lett. 87, 112107 (2005)
[13] Bodiou, L., Oussif, A., Braud, A., Doualan, J-L, Moncorgé, R., Lorenz, K., Alves, E., Opt. Mater. (accepted for publication)
[14] Wang, K., Martin, R.W., Nogales, E., Katchkanov, V., O'Donnell, K.P., Hernandez, S., Lorenz, K., Alves, E., Ruffenach, S., Briot, O., Opt. Mater. (accepted for publication)
[15] Lorenz, K., Nogales, E., Nédélec, R., Penner, J., Vianden, R., Alves, E., Martin, R.W., O'Donnell, K.P., Mat. Res. Soc. Symp. Proc. Fall Meeting 2005 (sent for publication)

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed