11 results
High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.49
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- 2003
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Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.50
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- 2003
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Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes
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- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.48
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- 2003
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Growth Kinetics and Structural Quality in GaN Epitaxy by Low Pressure MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 207
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- 1995
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Strain Effects in GaN on Sapphire: Towards a Quantitative Comprehension
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 411
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- 1995
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Plasma assisted nitrogen doping of ZnSe grown by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 340 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 463
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- 1994
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The influence of tellurium interdiffusion on the optical properties of MOVPE-grown ZnSe-ZnTe superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 340 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 521
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- 1994
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Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 340 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 321
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- 1994
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Electronic structure of short-period ZnSe/ZnTe superlattices grown by MOVPE at 300ºC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 308 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 461
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- 1993
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Dependence on MOCVD Growth Temperature of The Photoluminescence Properties of ZnSe, ZnTe, and ZnSe(1-x)Te(x) Alloys and ZnSe/ZnTe Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 263 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 371
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- 1992
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Explanation of Observed P-Type Conductivity in Movpe ZnSE/GaAs Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 415
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- 1990
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