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Plasma assisted nitrogen doping of ZnSe grown by MOVPE

Published online by Cambridge University Press:  22 February 2011

T. Cloitre ,
O. Briot ,
N. Briot ,
B. Gil  and
R.L. Aulombard
T. Cloitre
Affiliation:
Groupe d'Etudes de Semiconducteurs, Université Montpellier IICC 074 Place E. Bataillon, 34095 Montpellier Cedex 5
O. Briot
Affiliation:
Groupe d'Etudes de Semiconducteurs, Université Montpellier IICC 074 Place E. Bataillon, 34095 Montpellier Cedex 5
N. Briot
Affiliation:
Groupe d'Etudes de Semiconducteurs, Université Montpellier IICC 074 Place E. Bataillon, 34095 Montpellier Cedex 5
B. Gil
Affiliation:
Groupe d'Etudes de Semiconducteurs, Université Montpellier IICC 074 Place E. Bataillon, 34095 Montpellier Cedex 5
R.L. Aulombard
Affiliation:
Groupe d'Etudes de Semiconducteurs, Université Montpellier IICC 074 Place E. Bataillon, 34095 Montpellier Cedex 5
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Abstract

We designed a plasma cell for nitrogen doping of ZnSe, using a metal organic vapour phase epitaxy (MOVPE) horizontal reactor. With the following growth conditions: Tg=300°C, P=1 Torr and a molar VI/II ratio of 5, successful p-type doping was obtained, as assessed by photoluminescence experiments, but with a free carrier concentration still too low to be detected by transport measurements. The passivation of nitrogen active species by hydrogen is discussed. The possible interaction with the carrier gas has been studied through the use of H2, N2 and He as carrier gases. We demonstrate that the use of helium as carrier gas leads to sensible improvement of the photoluminescence features related to nitrogen acceptor. On the other hand, the use of N2 as carrier gas leads to poor homogeneity of the layers with few effects on the doping level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 463
Copyright
Copyright © Materials Research Society 1994

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References

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