8 results
Performance of SiC Microwave Transistors in Power Amplifiers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D10-05
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- 2008
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Electroluminescence from 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H4.8
- Print publication:
- 2000
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Growth and Characterisation of 4H-SiC MESFET structures grown by Hot-Wall CVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H2.3
- Print publication:
- 2000
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Observation of a Non-stoichiometric Layer at the Silicon Dioxide – Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.45
- Print publication:
- 2000
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Characterization of SiO2/SiC Samples Using Photoelectron Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 39
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- 1999
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3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering
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- Journal:
- Journal of Materials Research / Volume 10 / Issue 6 / June 1995
- Published online by Cambridge University Press:
- 03 March 2011, pp. 1349-1351
- Print publication:
- June 1995
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Fast Recombination of Excess Carrier in 6H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 699
- Print publication:
- 1994
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Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 157
- Print publication:
- 1994
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