Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T08:50:42.756Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Recombination of Excess Carrier in 6H-SiC

Published online by Cambridge University Press:  21 February 2011

R. Tomashiunas ,
E. Vanagas ,
M. Petrauskas ,
A. Zhindulis ,
M. Willander ,
Q. Wahab  and
H. Bergner
R. Tomashiunas
Affiliation:
Vilnius University, Semiconductor Physics Department, Sauletekio 10, 2054 Vilnius, Lithuania
E. Vanagas
Affiliation:
Vilnius University, Semiconductor Physics Department, Sauletekio 10, 2054 Vilnius, Lithuania
M. Petrauskas
Affiliation:
Vilnius University, Semiconductor Physics Department, Sauletekio 10, 2054 Vilnius, Lithuania
A. Zhindulis
Affiliation:
Vilnius University, Semiconductor Physics Department, Sauletekio 10, 2054 Vilnius, Lithuania
M. Willander
Affiliation:
Linköping University, Department of Physics, S-581 83 Linköping, Sweden
Q. Wahab
Affiliation:
Linköping University, Department of Physics, S-581 83 Linköping, Sweden
H. Bergner
Affiliation:
Friedrich-Schiller-Universität Jena, 07743 Jena, Germany
Get access

Abstract

Fast carrier recombination phenomena in 6H-SiC has been investigated. Evaluation of carrier recombination in nitrogen doped n-type 6H-SiC grown by the Lely method have been carried out using picosecond photoconductivity, time-resolved photoluminescence and dynamic gratings (DG) techniques. From photoluminescence measurements the hole capture by neutral (nitrogen) donors is discussed. The hole capture times and capture cross sections 820 ps, 2.32 ns and 1.5–10-15cm2, 1.2–10-15cm2, respectively, by each of the inequivalent donor were evaluated. From the photoconductivity measurements the electron lifetimes ∼ 1.5 μs at 300 K and (3.5÷6.5)μs at 125 K were obtained. The ambipolar diffusion coefficient 1.4 cm2.s-1 obtained from dynamic gratings measurements is in good coincidence with the calculated values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 699
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anikin, M., Strelchuk, A.M., Syrkin, A.L. and Chelnokov, V.E., to be published in the Proceedings of ICSCRM, Washington DC, 1993, p. 1–52;Google Scholar
Strelchuk, A.M., Syrkin, A.I., Chelnokov, V.E., Cherenkov, A.E. and Dmitriev, V.A., to be published in the Proceedings of ICSCRM, Washington DC, 1993, p. 11–21.Google Scholar
2. Anikin, M.M., Lebedev, A.A., Popov, I.V., Strelchuk, A.M., Suvorov, A.V., Syrkin, A.L. and Chelnokov, V.E., Sov. Phys. Semicond. 5(20), 844 (1986).Google Scholar
3. Naumov, A.V. and Sankin, V.I., Sov. Phys. Semicond. 6(23), 1009 (1989).Google Scholar
4. Rückmann, I., Kolenda, J., Henneberger, F. and Petrauskas, M., Phys. Status Solidi 150, 735 (1988).Google Scholar
5. Naumov, A., Nikitin, S., Ostroumov, A. and Vodakov, V., Sov. Phys. Semicond. 21, 37 (1987).Google Scholar
6. Nishino, S., Ibaraki, A., Matsunami, H. and Tanako, T., Jap. J. Appl. Phys. 19, L353 (1980).Google Scholar
7. Eichler, H.J., Gunter, P. and Pohl, D.W., Laser-Induced Dynamics Grating, (Springer, Berlin, 1985)Google Scholar
8. Smirl, A.L., Semiconductor Probed by Ultrafast Laser Spectroscopy, edited by Alfano, R.R. Vol. 1 (Academic Press, 1984), p. 198.Google Scholar
9. Hoffman, C.A., Jarasiunas, K., Gerritsen, H.J. and Nurmiko, A.V., Appl. Phys. Lett. 33, 536 (1978).Google Scholar
10. Choyke, W.J., Mater. Research Bullet. 4, 141 (1969).Google Scholar
11. Makarov, V.V., Sov. Phys. Semicond. 9(6), 1556 (1972).Google Scholar
12. Wheeler, B.F., Sol. St. Communie. 4, 173 (1966).Google Scholar
13. Manning, R.J., Miller, A., Fox, A.M. and March, J.H., Electron. Lett. 20, 601 (1984).Google Scholar
14. Evstropov, V.V., Vn.Linkov, I., Morozenko, Ya.V. and Pikus, F.G., PhysicaB 185, 313 (1993).Google Scholar
15. Balandovich, V.S. and Violina, G.N., Sov. Phys. Semicond. 8(15), 1650 (1981).Google Scholar
16. Pensl, G. and Choyke, W.J., Physica B 185, 264 (1993).Google Scholar
17. Ivanov, P.A. and Chelnokov, V.E., Semicond. Sci. Technol. 7, 863 (1992).Google Scholar
18. Ryvkin, S.M., Photoelectronic effects in semiconductors, (Consultants Bureau, New York, 1964), p. 494.Google Scholar