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Characterization of SiO2/SiC Samples Using Photoelectron Spectroscopy

Published online by Cambridge University Press:  10 February 2011

L. I. Johansson ,
P- A. Glans ,
Q. Wahab ,
T. M. Grehk ,
T. H. Eickhoff  and
W. Drube
L. I. Johansson
Affiliation:
Department of Physics, Linköping University, S-58183 Linköping
P- A. Glans
Affiliation:
Department of Physics, Linköping University, S-58183 Linköping
Q. Wahab
Affiliation:
Department of Physics, Linköping University, S-58183 Linköping
T. M. Grehk
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen- Synchrotron DESY, D-22603 Hamburg
T. H. Eickhoff
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen- Synchrotron DESY, D-22603 Hamburg
W. Drube
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen- Synchrotron DESY, D-22603 Hamburg
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Abstract

The results of photoemission studies of SiO2/SiC samples for the purpose of revealing presence of any carbon containing by-products at the interface are reported. Two components could be identified in recorded Si 2p and C ls core level spectra. For Si 2p these were identified to originate from SiO2 and SiC while for C ls they were interpreted to originate from graphite like carbon and SiC. The variation in relative intensity of these components with emission angle was first investigated. Thereafter the intensity of the different components were studied after successive Ar+-sputtering cycles. Both experiments showed contribution from graphite like carbon on top of the oxide but not at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 39
Copyright
Copyright © Materials Research Society 1999

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References

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