14 results
Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF32-02
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- 2005
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Low dislocation density, high power InGaN laser diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 2004
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Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I7.6.1
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- 2001
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Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G7.5
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- 2000
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GaN Homoepitaxy for Device Applications
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 878-889
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- 1999
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GaN Homoepitaxy for Device Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G10.2
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- 1998
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Observation Of Native Ga Vacancies In Gan By Positron Annihilation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 757
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- 1997
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GaN Crystals: Growth and Doping Under Pressure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 15
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- 1997
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Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 311
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- 1997
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Doping, Activation of Impurities, and Defect Annihilation in Gan by High Pressure Annealing
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 949
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- 1997
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Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e15
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- 1997
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GaN Crystals Grown in the Increased Volume High-Pressure Reactors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 35
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- 1996
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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e13
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- 1996
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Growth and Properties of Bulk Single Crystals of GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 15
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- 1995
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