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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

  • H. Teisseyre (a1), G. Nowak (a1), M. Leszczynski (a1), I. Grzegory (a1), M. Bockowski (a1), S. Krukowski (a1), S. Porowski (a1), M. Mayer (a2), A. Pelzmann (a2), Markus Kamp (a2), K. J. Ebeling (a2) and G. Karczewski (a3)...

Abstract

GaN epitaxial layers on GaN single crystals were grown using molecular beam epitaxy with an NH3 source. The deposited layers were examined by high resolution x-ray diffraction and photoluminescence (PL) spectroscopy. We observed strong and extremely narrow (half-widths of 0.5 meV) lines related to the bound excitons. In the higher energy range we observed three strong lines. Two of them are commonly attributed to free exciton transitions A (3.4785 eV) and B (3.483 eV). Their energetic positions are characteristic of strain-free GaN material.

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