29 results
Imaging Single Dopant Atoms and Nanoclusters in Highly n-type Bulk Si
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- Journal:
- Microscopy and Microanalysis / Volume 8 / Issue S02 / August 2002
- Published online by Cambridge University Press:
- 01 August 2002, pp. 1614-1615
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- August 2002
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Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon
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- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J5.7
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- 2001
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Implant Dose and Spike Anneal Temperature Relationships
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- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J8.1
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- 2001
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The Effect of Carbon/Self-Interstitial Clusters on Carbon Diffusion in Silicon Modeled by Kinetic Monte Carlo Simulations
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- MRS Online Proceedings Library Archive / Volume 610 / 2000
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- 17 March 2011, B7.2
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- 2000
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Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence
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- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B9.4
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- 2000
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Junctions for Deep Sub-100 NM MOS: How Far will Ion Implantation Take Us?
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- MRS Online Proceedings Library Archive / Volume 610 / 2000
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- 17 March 2011, B1.2
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- 2000
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Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si
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- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B9.2
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- 2000
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Antimony Delta Doping by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy
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- Microscopy and Microanalysis / Volume 5 / Issue S2 / August 1999
- Published online by Cambridge University Press:
- 02 July 2020, pp. 614-615
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- August 1999
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Shallow Boron Implant Activation
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- MRS Online Proceedings Library Archive / Volume 568 / 1999
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- 10 February 2011, 31
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- 1999
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Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers
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- MRS Online Proceedings Library Archive / Volume 568 / 1999
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- 10 February 2011, 3
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- 1999
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Atomistic Modeling of Point and Extended Defects in Crystalline Materials
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- MRS Online Proceedings Library Archive / Volume 532 / 1998
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- 10 February 2011, 43
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- 1998
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Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 341
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- 1997
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The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted into Silicon
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
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- 15 February 2011, 315
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- 1997
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Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
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- 15 February 2011, 303
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- 1997
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Enhanced Dissolution Of Extrinsic Dislocation Loops In Silicon Annealed In NH3
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- MRS Online Proceedings Library Archive / Volume 442 / 1996
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- 15 February 2011, 157
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- 1996
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An Investigation Of Vacancy Population During Arsenic Activation In Silicon
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- MRS Online Proceedings Library Archive / Volume 442 / 1996
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- 15 February 2011, 151
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- 1996
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Titanium Silicidation Induced Point Defects in SI
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- MRS Online Proceedings Library Archive / Volume 402 / 1995
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- 15 February 2011, 143
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- 1995
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Properties of Point-Defects in Si for Process Modeling
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- MRS Online Proceedings Library Archive / Volume 389 / 1995
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- 15 February 2011, 3
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- 1995
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Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon
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- MRS Online Proceedings Library Archive / Volume 354 / 1994
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- 21 February 2011, 307
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- 1994
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Island Formation in Ge on Si Heteroepitaxy
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- MRS Online Proceedings Library Archive / Volume 198 / 1990
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- 28 February 2011, 51
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- 1990
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