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Titanium Silicidation Induced Point Defects in SI

Published online by Cambridge University Press:  15 February 2011

S. B. Herner ,
H.-J. Gossmann  and
K. S. Jones
S. B. Herner
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32604
H.-J. Gossmann
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32604
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Abstract

Antimony and B-doping superlattices were employed to study the population of Si native point defects after the formation of a TiSi2 film at 800 to 890°C. Formation of a TiSi2 film at these temperatures results in interface roughness on the order of 300 Å (root mean square). Artifacts in SIMS data arising from sputtering through such a rough interface were avoided by chemomechanical polishing of the underlying Si after chemically etching off the TiSi2 film. The resulting Si surface had a roughness of 0.7 Å. Enhancement in the diffusion of Sb and retardation in the diffusion of B over control samples without a TiSi2 film indicate a vacancy supersaturation and an interstitial undersaturation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 143
Copyright
Copyright © Materials Research Society 1996

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