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Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si

Published online by Cambridge University Press:  17 March 2011

R. Kalyanaraman ,
T. E. Haynes ,
V. C. Venezia ,
D. C. Jacobson ,
H.-J. Gossmann  and
C. S. Rafferty
R. Kalyanaraman
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
T. E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
V. C. Venezia
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
C. S. Rafferty
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

It has been shown recently that Au labeling can be used to profile vacancy-type defects located near half the projected range (½Rp) in MeV-implanted Si. In this work we have quantified the technique by determining the ratio of vacancies annihilated to decrease in the number of Au atoms trapped (calibration factor ‘k’) for the Au labeling technique. The 3 step experiment involved: 1) a high-energy Si-self implant (HEI) followed by an anneal to form stable vacancy clusters, 2) a controlled removal of vacancies via a medium energy Si self implant and interstitial-cluster dissolution anneal, and finally 3) Au labeling to count the change in vacancy concentration in the near surface region (0.1-1.6μm). It is seen that the Au concentration decreases linearly with increasing interstitial injection and the slope of this decrease determined the number of vacancies per trapped Au atom. The value of k was determined to be 1.2±0.2 vacancies per trapped Au atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B9.2
Copyright
Copyright © Materials Research Society 2000

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References

1. Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Poate, J.M., App. Phys. Lett. 65, 2305 (1994).10.1063/1.112725Google Scholar
2. Cheng, J.Y., Eaglesham, D.J., Jacobson, D.C., Stolk, P.A., Benton, J.L., Poate, J.M., J. Appl. Phys. 80, 2105 (1996).10.1063/1.363103Google Scholar
3. Holland, O.W., Xie, L., Nielsen, B., Zhou, D.S., J. Elec. Mat. 25, 99 (1996).10.1007/BF02666181Google Scholar
4. Ellingboe, S.L., and Ridgway, M.C., Nucl. Instrum. Meth. Phys. Res. B 127/128, 90 (1997).10.1016/S0168-583X(96)01110-XGoogle Scholar
5. Szeles, C., Nielsen, B., Asoka-Kumar, P., Lynn, K.G., Anderle, M., Ma, T.P., Rubloff, G.W., J. Appl. Phys. 76, 3403 (1994).10.1063/1.357470Google Scholar
6. Yoon, M., Larson, B.C., Tischler, J.Z., Haynes, T.E., Chung, J.-S., Ice, G.E., Zschack, P., Appl. Phys. Lett. 75, 2791 (1999).10.1063/1.125151Google Scholar
7. Brown, R.A., Kononchuk, O., Rozgonyi, G.A., Koveshnikov, S., Knights, A.P., Simpson, P.J., Gonzalez, F., J. App. Phys. 84, 2459 (1998).10.1063/1.368438Google Scholar
8. Koveshnikov, S.V. and Kononchuk, O., App. Phys. Lett. 73, 2340 (1998).10.1063/1.122455Google Scholar
9. Venezia, V.C., Eaglesham, D.J., Haynes, T.E., Agarwal, A., Jacobson, D.C., Gossmann, H.-J., Baumann, F.H., Appl. Phys. Lett., 73, 2980, (1998).10.1063/1.122650Google Scholar
10. Mazzone, A.M., Phys. Stat. Sol. (a) 95, 149 (1986).10.1002/pssa.2210950118Google Scholar
11. Ziegler, J.F., Bierszack, J.P., Littmark, U., The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985).Google Scholar
12. Kalyanaraman, R., Haynes, T.E., Venezia, V.C., Jacobson, D.C., Gossmann, H.-J., Rafferty, C.S., appearing in App. Phys. Lett. V76, June, 2000 10.1063/1.126653Google Scholar
13. Kalyanaraman, R., Haynes, T.E., Jacobson, D.C., Gossmann, H.-J., Rafferty, C.S., “Quantitative depth profiles of vacancy cluster defects produced by MeV ion implantation in Si: Species and dose dependence’, these proceeding.Google Scholar
14. Follstaedt, D.M., Myers, S.M., Petersen, G.A., Medernach, J.W., J. Elec. Mat. 25, 151 (1996).10.1007/BF02666190Google Scholar