7 results
Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 607
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- 1991
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Carbon Incorporation in Metal Organic Vapor Phase Epitaxy Grown Gaas Using chyX1-y, TMG, and ASH3
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- Journal:
- MRS Online Proceedings Library Archive / Volume 204 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 171
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- 1990
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Formation of Shallow Boron P+ Junctions Using Sb Amorphization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 128 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 635
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- 1988
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Channeling of Shallow Si Implants Into GaAs as a Function of Tilt and Rotation Angles
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 439
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- 1988
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Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 106 / 1987
- Published online by Cambridge University Press:
- 22 February 2011, 285
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- 1987
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Dopant Diffusion in TiSi2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 77 / 1986
- Published online by Cambridge University Press:
- 26 February 2011, 333
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- 1986
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Effects of Indium Preamorphization on Boron Implanted Silicon Annealed by RTA
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- Journal:
- MRS Online Proceedings Library Archive / Volume 74 / 1986
- Published online by Cambridge University Press:
- 28 February 2011, 717
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- 1986
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