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Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

  • R. Angelucci (a1), C. Y. Wong (a1), J. Y.-C. Sun (a1), G. Scilla (a1), P. A. McFarland (a1), A. C. Megdanis (a1) and E. Landi (a2)...

Abstract

The feasibility and advantages of using rapid thermal annealing to achieve a proper n+ polysilicon work function are demonstrated. Our data shows that RTA can be used to activate arsenic in the polysilicon gate after a regular furnace anneal or to diffuse and activate arsenic without any prior furnace anneal. Interface states and fixed charges due to RTA can be annealed out at 500°C for 30 min in forming gas. New insights into the diffusion, segregation, and activation of As in polysilicon during furnace and/or rapid thermal annealing have been obtained.

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1. Sun, J.Y.-C., Taur, Y., Dennard, R.H., Klepper, S.P., IEEE Trans. Electron Dev., ED-34, 19 (1987)
2. See for example, Rapid Thermal Processing of Electronic Materials,ed. by Wilson, S.R., Powell, R. and Davies, D.E. Mater. Res. Soc. Proc. 92 (1987)
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6. Lifshitz, N., IEEE Trans. Electron Dev., ED-32, 617 (1985)

Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

  • R. Angelucci (a1), C. Y. Wong (a1), J. Y.-C. Sun (a1), G. Scilla (a1), P. A. McFarland (a1), A. C. Megdanis (a1) and E. Landi (a2)...

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