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Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures

  • P. D. Agnello (a1), T. O. Sedgwick (a1), M. S. Goorsky (a1), J. Ott (a1), T. S. Kuan (a1), G. Scilla (a1) and V. P. Kesan (a1)...

Abstract

Dichlorosilanc and germane were used to grow silicon-germanium alloys at temperatures as low as 550°C at atmospheric pressure. Germanium mole fractions as high as 44% were obtained and the layers exhibit smooth surface morphology. Silicon-gcrmanium/silicon multilayers with abrupt hctero-intcrfaccs have been achieved. Cross Section Transmission Electron Microscopy, (XTEM) and High Resolution X-Ray Diffraction, (HRXRD) characterization of the hetero-interface abruptness will be presented. Recent results on two-dimensional (2-D) hole mobility structures grown by this technique will also be reported. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidcwall, which has been commonly observed in high temperature silicon growth.

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Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures

  • P. D. Agnello (a1), T. O. Sedgwick (a1), M. S. Goorsky (a1), J. Ott (a1), T. S. Kuan (a1), G. Scilla (a1) and V. P. Kesan (a1)...

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