7 results
Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-07
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- 2008
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Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D7.4
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- 2004
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Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding
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- Journal:
- MRS Online Proceedings Library Archive / Volume 809 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, B8.22
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- 2004
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Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.9
- Print publication:
- 2001
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X-Ray Techniques for Silicides
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.2
- Print publication:
- 2001
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Study of SiH4-based PECVD Low-k Carbon-doped Silicon Oxide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 612 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, D3.3.1
- Print publication:
- 2000
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Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 511 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 233
- Print publication:
- 1998
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