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Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

  • KungLiang Lin (a1), Edward-Yi Chang (a2), Tingkai Li (a3), Wei-Ching Huang (a4), Yu-Lin Hsiao (a5), Douglas Tweet (a6), Jer-shen Maa (a7) and Sheng-Teng Hsu (a8)...

Abstract

GaN film grown on Si substrate with AlN/AlxGa1−xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1−xN film with Al composition varying from 0∼ 0.66 was used. The correlation of the Al composition in the AlxGa1−xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1−xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1−xN buffer layers.

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Keywords

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

  • KungLiang Lin (a1), Edward-Yi Chang (a2), Tingkai Li (a3), Wei-Ching Huang (a4), Yu-Lin Hsiao (a5), Douglas Tweet (a6), Jer-shen Maa (a7) and Sheng-Teng Hsu (a8)...

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