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Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

Published online by Cambridge University Press:  01 February 2011

KungLiang Lin ,
Edward-Yi Chang ,
Tingkai Li ,
Wei-Ching Huang ,
Yu-Lin Hsiao ,
Douglas Tweet ,
Jer-shen Maa  and
Sheng-Teng Hsu
KungLiang Lin
Affiliation:
linkung.mse93g@nctu.edu.tw, National Chiao Tung University, Department of Materials Science and Engineering, R407 MIRC ,1001 University Road, Hsinchu, 300, Taiwan, +886-3-5712121-52999, +886-3-5745497
Edward-Yi Chang
Affiliation:
edc@mail.nctu.edu.tw, National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Tingkai Li
Affiliation:
TLi@sharplabs.com, Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Wei-Ching Huang
Affiliation:
s8831329@hotmail.com.tw, National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Yu-Lin Hsiao
Affiliation:
sannin.mse95g@nctu.edu.tw, National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Douglas Tweet
Affiliation:
DTweet@sharplabs.com, Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Jer-shen Maa
Affiliation:
JMaa@sharplabs.com, Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Sheng-Teng Hsu
Affiliation:
shsu@sharplabs.com, Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
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Abstract

GaN film grown on Si substrate with AlN/AlxGa1−xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1−xN film with Al composition varying from 0∼ 0.66 was used. The correlation of the Al composition in the AlxGa1−xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1−xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1−xN buffer layers.

Keywords

III-Vchemical vapor deposition (CVD) (deposition)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-07
Copyright
Copyright © Materials Research Society 2008

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References

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