Symposium C – New Applications for Wide-Bandgap Semiconductors
Research Article
Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Published online by Cambridge University Press: 01 February 2011, C5.5
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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures
- Published online by Cambridge University Press: 01 February 2011, C4.2
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Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia
- Published online by Cambridge University Press: 01 February 2011, C3.23
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4H-SIC Dmosfets for High Frequency Power Switching Applications
- Published online by Cambridge University Press: 01 February 2011, C2.7
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Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition
- Published online by Cambridge University Press: 01 February 2011, C3.2
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Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition
- Published online by Cambridge University Press: 01 February 2011, c7.9
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Large Area 6H- and 4H-SiC Photoconductive Switches
- Published online by Cambridge University Press: 01 February 2011, C7.2
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Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy
- Published online by Cambridge University Press: 01 February 2011, C2.1
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Challenges for High Temperature Silicon Carbide Electronics
- Published online by Cambridge University Press: 01 February 2011, C1.4
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Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Indium Compositions
- Published online by Cambridge University Press: 01 February 2011, C3.35
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Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals
- Published online by Cambridge University Press: 01 February 2011, C3.29
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HVPE-GROWN AlGaN/GaN HEMTs
- Published online by Cambridge University Press: 01 February 2011, C2.3
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High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications.
- Published online by Cambridge University Press: 01 February 2011, C3.49
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Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN
- Published online by Cambridge University Press: 01 February 2011, C3.39
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The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates
- Published online by Cambridge University Press: 01 February 2011, C3.6
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Cathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering
- Published online by Cambridge University Press: 01 February 2011, C7.12
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Optical and Electrical Characterization of Annealed Silicon-implanted GaN
- Published online by Cambridge University Press: 01 February 2011, C3.55
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GaP-based MIS Capacitors Using a SiN Gate Dielectric
- Published online by Cambridge University Press: 01 February 2011, C4.6
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Self-assembled InP Quantum Dot -TiO2 Solid Grätzel Solar Cell
- Published online by Cambridge University Press: 01 February 2011, C3.25
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MOCVD Growth of AlN/GaN DBR Structure Under Various Ambient Conditions
- Published online by Cambridge University Press: 01 February 2011, C2.5
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