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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

  • Mark J. Yannuzzi (a1), Neil A. Moser (a1), Robert C. Fitch (a1), Gregg H. Jessen (a1), James K. Gillespie (a1), Glen D. Via (a1), Antonio Crespo (a1), Thomas J. Jenkins (a1), David C. Look (a2) and Donald C. Reynolds (a2)...

Abstract

In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

  • Mark J. Yannuzzi (a1), Neil A. Moser (a1), Robert C. Fitch (a1), Gregg H. Jessen (a1), James K. Gillespie (a1), Glen D. Via (a1), Antonio Crespo (a1), Thomas J. Jenkins (a1), David C. Look (a2) and Donald C. Reynolds (a2)...

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