Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-16T16:00:02.734Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

Published online by Cambridge University Press:  01 February 2011

Mark J. Yannuzzi ,
Neil A. Moser ,
Robert C. Fitch ,
Gregg H. Jessen ,
James K. Gillespie ,
Glen D. Via ,
Antonio Crespo ,
Thomas J. Jenkins ,
David C. Look  and
Donald C. Reynolds
Mark J. Yannuzzi
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Neil A. Moser
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Robert C. Fitch
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Gregg H. Jessen
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
James K. Gillespie
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Glen D. Via
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Antonio Crespo
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Thomas J. Jenkins
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
David C. Look
Affiliation:
Wright State University Dayton, OH 45435, U.S.A.
Donald C. Reynolds
Affiliation:
Wright State University Dayton, OH 45435, U.S.A.
Get access

Abstract

In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C4.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kumar, V., Lu, W., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Khan, M. Asif, and Adesida, Ilesanmi, IEEE Electron Device Lett. 23, 455,(2002).Google Scholar
2. , Rashmi, Kranti, A., Haldar, S., Gupta, R.S., Microelectronics Journal 33, 205 (2002).Google Scholar
3. Bradley, S.T., et. al., IEEE Transactions on Electron Devices 48, 412, (2001).Google Scholar
4. Jessen, G.H., et. al., Solid-State Electronics 46, 1427, (2002).Google Scholar
5. Zolper, J.C., Rieger, D.J., Baca, A.G., Pearton, S.J., Lee, J.W., and Stall, R.A., Appl. Phys. Lett. 69,538,(1996).Google Scholar