The interfacial characteristics of positive temperature coefficient of resistance (PTCR) BaTiO3-electrode interfaces were studied. Sessile drop wetting experiments in combination with measurements of the contact resistance of the interface were used to establish a fundamental perspective of the electrode-ceramic interface. It was shown that the thermodynamic work of adhesion Wad), which is the sum of the strengths of chemical interactions present at the interface, can be manipulated by the addition of chemically active elements to the electrode metal which enhance adhesion. This same procedure is shown to modify the important electrical interfacial properties such as the contact resistance.

The microwave dielectric characteristics and crystal structure of the Zn(NbxTa1−x)2O6 and Mg(NbxTa1−x)2O6 systems have been investigated. It was found that both systems exhibited a morphotropic phase transition. Based on the results it was suggested that permittivity and temperature coefficient of resonant frequency depend more on crystal structure rather than on chemical composition. It was also suggested that a two-phase mixture is better than a solid solution for achieving both high quality factor and good temperature stability.

Hard x-rays from a synchrotron source were utilized in diffraction experiments performed at elevated temperatures (up to ˜ 870 °C) on (Bi, Pb)2Sr2Ca2Cu3O10 (Bi-2223) tapes completely encased in silver. The general behavior of the phase and texture development under typical processing conditions was determined, and the effects that several variations in processing conditions had on the phase and texture development were examined. These results and their implications for improving processing conditions are discussed.

Microstructure in melt-textured bulk RE1Ba2Cu3O6+d crystals (RE123; RE = Sm, Nd) was investigated, changing the initial composition from the tie-line composition of RE123–Sm2Ba1Cu1O5 (Sm211)/Nd4Ba2Cu2O10 (Nd422) to the Ba-enriched side. It was found that the Sm211/Nd422 particle size decreased in the liquid with increasing the Ba/Cu ratio of the initial composition, and this tendency was also found in the grown Sm123 crystals. Composition of the Sm123 grown crystal could be controlled by selecting the Ba-enriched initial composition to obtain an almost stoichiometric compound, which resulted in higher Tc values. Furthermore, the Jc values also increased under low magnetic fields due to the significant decrease of Sm211 particle size. Therefore, changing the initial composition toward the Ba-enriched side was found to be a new process to enhance both Jc and Tc values simultaneously.

Pure, Pr3+, and Yb3+ doped Ca-fluoroapatite (Ca-FAP) crystals were grown by the Czochralski method. The effective distribution coefficient keff for Yb3+ was 0.5. For Pr3+ a very high keff of 1.4 was obtained. Values for keff are discussed in terms of an elastic model accounting for the strain energy originating from the difference in the size of Ln3+ ions. The Ln3+ concentrations were measured by absorbance spectroscopy, by inductively coupled plasma optical emission spectroscopy, and by electron microprobe analyses.

The kinetics of formation, phase stabilities, and dielectric constants of Pb(Li1/4Fe1/4W1/2)O3 and BaTiO3-added Pb(Li1/4Fe1/4W1/2)O3 have been compared. The addition of 2 mol% BaTiO3 in Pb(Li1/4Fe1/4W1/2)O3 was confirmed to promote the complete formation of the perovskite phase at 700 °C. Also, the thermal stability of the perovskite phase was significantly enhanced, which resulted in an increase of the dielectric permittivity.

Two optical methods are presented for the mechanical characterization of thin films, namely real time holographic interferometry and a fringe projection method called “contouring.” These two methods are coupled to the interferometry by the phase measurements, thus allowing the displacement field to be measured at all points on the membrane. We discuss the solutions retained in terms of their precision and sensitivity. These methods are then applied to membrane bulging tests, a type of test that is widely used in micro-mechanical studies. The measurements are performed on silicon single crystal and the results are compared to the solutions calculated by finite element methods. In both cases, the good agreement between theory and experiments allows the experimental apparatus to be validated.

This paper is a comprehensive review of the state-of-knowledge in the field of radiation effects in glasses that are to be used for the immobilization of high-level nuclear waste and plutonium disposition. The current status and issues in the area of radiation damage processes, defect generation, microstructure development, theoretical methods and experimental methods are reviewed. Questions of fundamental and technological interest that offer opportunities for research are identified.

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

A solidification model for Pr1+xBa2−xCu3O7−δ ternary oxides by the top seeded crystal pulling (SRL–CP: Solute Rich Liquid–Crystal Pulling) method is presented in which the composition of the grown single crystals is estimated from the starting composition in the crucible. This model involves the diffusion flux balance of each element at the growth interface in the liquid considering equilibrium tie-lines in the PrOy–BaO–CuO ternary phase diagram which have been obtained experimentally. The self-diffusion coefficient for Pr and the interdiffusivities for Ba and Cu in the liquid are used in this model because this liquid is a dilute solution for Pr. The calculated results are in good agreement with the experimental ones.

We report growth of high-quality Bi2Sr2CaCu2Oz single crystals with dimensions 2 × 1 × 0.03 mm3 with a melt and growth technique. The composition of this crystal is homogeneous and very close to the stoichiometric composition. Structure characterization of a single crystal was realized by measuring the (001) x-ray diffraction. The lattice parameters of a typical crystal are a = 5.414(2) Å, b = 5.413(2) Å, and c = 30.823(10) Å. The superconducting temperature Tc = 95 K with a sharp transition width (10–90% level) between 6 and 10 K was determined from resistivity and dc susceptibility. We have measured the magnetization of Bi2Sr2CaCu2Oz single crystal under magnetic field applied along the c-axis. The anomalous second peak effect appeared between 20 and 30 K. We discuss the qualities of these crystals.

A new method to prepare polycrystalline AlN thin films biaxially oriented on amorphous substrates has been demonstrated. The films were deposited at different angles of incidence with a rf sputtering system. Population-1 crystallites, oriented with their c-axis pointing toward the incoming flux with random orientation in aximuthal directions, predominate at low angle of incidence (near normal). Population-2 crystallites result from non-normal incidence and have their c-axis tilted away from the incoming flux and predominate at high, near glancing, angle of incidence. The alignment of crystallites (population-2) increases with angle of incidence. Crystallites align along the [11*0] channeling direction, characterized by a low sputtering yield, while misoriented crystal grains suffer a higher resputtering and their growth is inhibited. For films deposited at 75°, the FWHM of an x-ray ϕ scan profile is 25°, indicating a high in-plane alignment.

Deep trapping levels in Bi12TiO20 obtained by top seeded solution growth and by the hydrothermal technique have been compared. This was undertaken as such levels directly influence the photorefractive behavior of the material. It is found that the most predominant of the peaks revealed by thermally stimulated conductivity measurements represents two rather than a single defect level and that the deeper of the two becomes more significant in hydrothermally grown material. One defect found in the solution pulled material is notably absent from that produced hydrothermally. The consequence of adding phosphorus doping and the manner in which it affects the deep levels has also been examined.

Information about the nature of formed switching structures in amorphous hydrogenated silicon has been found from features of the electroluminescence (EL) spectrum. Several small peaks have been detected in the region of 1.8 to 2.4 eV, on the shoulder of the usual a-Si : H peak at 1.32 eV. The intensity of the latter is found to depend on the voltage across the film rather than the current. The EL fine structure can be explained in terms of a model of the switching where there are small metal-rich inclusions in the film. The apparent dependence of EL intensity on voltage is explained in terms of this model with parallel current paths in the structure.

The decomposition of Yba2Cu4O8 (Y-124) into Yba2Cu3O7-δ (Y-123) and CuO at high temperatures has been expected to create Y-123 with finely dispersed CuO precipitates suitable for flux pinning. In fact, samples of thermally decomposed Y-124 exhibit a critical current density, Jc, which is enhanced with respect to the starting material as well as to pure Y-123. Transmission electron microscopy (TEM) studies of furnace annealed Y-124 were not suitable to clarify the reason for this Jc enhancement. Nevertheless, the formation and growth of CuO precipitates have been observed by in situ decomposition of the Y-124 starting material due to electron beam heating within the TEM.

The direct current (dc) electrical conductivity of the conducting polymer Versicon™ blended in poly(vinyl chloride) (PVC) was measured from 25 K to 310 K. The data were fitted to various electrical transport models, and the best fit was found with the fluctuation-induced tunneling model, suggesting that tunneling dominates in the mode of electron transport at low temperatures. The parameters, T1 and T0 from the fluctuation-induced tunneling model, were found to be 625 K and 129 K, respectively. The interparticle distance was estimated to be about 13 Å. At higher temperatures, the plot of the log of resistivity versus the reciprocal of the temperature was linear, indicating that thermally activated hopping dominated the mode of electrical transport at these temperatures. The results support earlier findings that VersiconTM forms continuous aggregates in blends. The results also support growing evidence in the literature that these types of aggregate formation tend to strongly influence the mode of electrical transport in composites.

Microstructure control of the SmBCO superconductor was carried out using the floating zone partial melting and solidification method. It is generally recognized that finely and uniformly dispersed nonsuperconductive high temperature stable phase (Sm211) particles included in the superconductive Sm123 matrix act as effective pinning centers. Microstructure formation of the partial molten mixture (Sm211 particles and BaO–CuO liquid) by decomposition of the precursor Sm123 on melting and solidification of Sm123 from the mixture have to be controlled concurrently to fabricate the 123/211 composite fiber with the optimum microstructure. During unidirectional solidification, planar crystal growth which provides the single crystal growth of Sm123 becomes unstable with increased growth rate. During unidirectional melting, the mean diameter of aligned Sm211 particles behind the melting interface decreases with increased growth rate and with decreased temperature gradient at the melting interface. Initial composition of the precursor significantly affects the formation behavior of Sm211 particles. The contribution of process parameters to the microstructure formation is also briefly discussed.

The work described in this paper is part of a systematic study of ohmic contact strategies for GaN-based semiconductors. Gold contacts exhibited ohmic behavior on p-GaN when annealed at high temperature. The specific contact resistivity (ρc) calculated from TLM measurements on Au/p-GaN contacts was 53 Ω · cm2 after annealing at 800 °C. Multilayer Au/Mg/Au/p-GaN contacts exhibited linear, ohmic current-voltage (I-V) behavior in the as-deposited condition with ρc = 214 Ω · cm2. The specific contact resistivity of the multilayer contact increased significantly after rapid thermal annealing (RTA) through 725 °C. Cross-sectional microstructural characterization of the Au/p-GaN contact system via high-resolution electron microscopy (HREM) revealed that interfacial secondary phase formation occurred during high-temperature treatments, which coincided with the improvement of contact performance. In the as-deposited multilayer Au/Mg/Au/p-GaN contact, the initial 32 nm Au layer was found to be continuous. However, Mg metal was found in direct contact with the GaN in many places in the sample after annealing at 725 °C for 15 s. The resultant increase in contact resistance is believed to be due to the barrier effect increased by the presence of the low work function Mg metal.

Superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) compound was electrochemically reduced in a protogenic electrolyte of benzoic acid dissolved in acetone. The critical temperatures (Tc) of the reduced Bi-2212 were enhanced from 75 K up to ∼90 K, which were reportedly the highest value of Bi-2212 superconductor. In spite of the enhancement of Tc, a diamagnetism of Bi-2212 was weakened after the reduction. This phenomenon was discussed in terms of the flux penetration depth. The electrochemically reduced Bi-2212 had a different structural stability from a partly oxygen-removed Bi-2212 which was prepared by annealing in reducing atmospheres. These results are attributable to injection of protons from the benzoic acid into the Bi-2212 structure.

Biaxially textured yttria stabilized zirconia (YSZ) buffer layers are prepared on rotating cylindrical surfaces by an ion-beam-assisted deposition (IBAD) process. A large fraction of the cylinder surface can be coated at the same time, resulting in an effective deposition rate of 40 nm/h for the whole tube circumference (diameter of the tube 12 mm). The in-plane alignment depends on the total film thickness and the rotation velocity. The best in-plane textures achieved so far with a full width half maximum (FWHM) value of 27° are sufficient for the preparation of YbaCuO films with critical current densities above 105 A cm−2 at 77 K and self-fields.