Studies have shown that people with obsessive–compulsive disorder (OCD) have impairments in spatial working memory (SWM) performance. However, it remains unclear whether this deficit represents a cognitive endophenotype preceding symptoms or a correlate of OCD. We investigated SWM in 69 people with OCD, 77 unaffected first-degree relatives of people with OCD and 106 healthy control participants. Taking age effects into account, SWM performance was best in healthy controls, intermediate in relatives and worst in OCD participants. However, since performance did not differ significantly between healthy controls and relatives, our study does not fully support SWM performance as a core cognitive endophenotype of OCD.

Culicoides biting midges are of great importance as vectors of pathogens and elicitors of allergy. As an alternative for the identification of these tiny insects, matrix-assisted laser desorption/ionization time of flight mass spectrometry (MALDI-TOF MS) was evaluated. Protein mass fingerprints were determined for 4–5 field-caught reference (genetically confirmed) individuals of 12 Culicoides species from Switzerland, C. imicola from France, laboratory-reared C. nubeculosus and a non-biting midge. Reproducibility and accuracy of the database was tested in a validation study by analysing 108 mostly field-caught target Culicoides midges and 3 specimens from a non-target species. A reference database of biomarker mass sets containing between 24 and 38 masses for the different species could be established. Automated database-based identification was achieved for 101 of the 108 specimens. The remaining 7 midges required manual full comparison with the reference spectra yielding correct identification for 6 specimens and an ambiguous result for the seventh individual. Specimens of the non-target species did not yield identification. Protein profiling by MALDI-TOF, which is compatible with morphological and genetic identification of specimens, can be used as an alternative, quick and inexpensive tool to accurately identify Culicoides biting midges collected in the field.

In this paper we discuss the dimension-theoretical properties of rational maps on the Riemann sphere. In particular, we study the existence and uniqueness of generalized physical measures for several classes of maps including hyperbolic, parabolic, non-recurrent and topological Collet–Eckmann maps. These measures have the property that their typical points have maximal Hausdorff dimension. On the other hand, we prove that the set of divergence points (the set of points which are non-typical for any invariant measure) also has maximal Hausdorff dimension. Finally, we prove that if (fa)a is a holomorphic family of stable rational maps, then the dimension d(fa) is a continuous and plurisubharmonic function of the parameter a. In particular, d(f) varies continuously and plurisubharmonically on an open and dense subset of Ratd, the space of all rational maps with degree d≥2.

Different methods for Na incorporation are known for the use of Na-free substrates like stainless steel or polyimide foil. In this work Cu(In,Ga)Se2 (CIGS) absorber layers with different amounts of Na are investigated. The CIGS samples were prepared via a roll-to-roll deposition process with ion beam assistance (Solarion) and by a multi-stage low temperature co-evaporation process (HZB). Na was either incorporated via in-situ co-evaporation of NaF (for roll-to-roll deposition) or by a Na-containing precursor (for multi-stage deposition). With increasing amounts of Na an increase of VOC is observed for both deposition tech-niques. In contrast, within the deposition parameters used, jSC decreases with increasing Na amount for co-evaporation of NaF while it seems unaffected when using a NaF precursor layer. The elemental depth profiles of the different CIGS thin films were studied via secondary ion mass spectroscopy and were found to depend strongly on the deposition technique. It seems that beneficial effects of the addition of Na are independent of the method of in-corporation, even if the distribution of Na in the CIGS layer is different due to different methods of incorporation and CIGS deposition processes.

The effect of the amount of Na present during the 3-stage growth of CIGS at very low temperature T2 on polyimide (PI) foils is studied. While at higher growth temperatures Na seems to impede In-Ga interdifussion, at very low temperatures it appears to further the process. An increase in Voc for a higher Na concentration can be explained by a higher net carrier concentration as measured by drive level capacitance profiling. Admittance spectroscopy measurements show shallow defects when the Na concentration increases. These results suggest that the main role of Na could be the passivation of InCu donor deep defect, in agreement with Wei's theory. Efficiencies of up to 15.1 % (0.5 cm2 active area with antireflection coating) and 13.6%, 14.1% (1 cm2 total and active area respectively without antireflection coating) for nominal T2=420° C were achieved on PI substrates so far.

The objective of this work is to increase the open circuit voltage of CuGaSe2(CGS)-based solar cells without decreasing their efficiency. For that, the interface between the p-type CGS absorber and the n-type CdS/ZnO window layer is compared using three different recipes for the growth of the buffer layer. Results show the importance of the adaptation of the CdS buffer layer to the CuGaSe2 absorber film. A maximum open circuit voltage of 922 mV is achieved for the devices when using 60ºC as the chemical bath temperature and a low thiourea concentration. Drive-level capacitance profiling, external quantum efficiency and temperature dependent current-voltage measurements reveal a better quality of the CdS/CuGaSe2 interface for this buffer layer deposition conditions. Factors such as the larger depletion region width and the lower doping level, reducing the tunnelling component, are pointed out as responsible of the higher Voc.

Chalcopyrite-type thin films - CuInS2, CuInSe2, CuGaSe2, and Cu(In,Ga)Se2 - in various completed solar cells were studied in cross-section by means of electron-backscatter diffraction (EBSD). Valuable information on grain sizes, local grain orientations, film textures, and grain boundaries were extracted from the EBSD linescans and maps. The grain-size distributions from the chalcopyrite-type thin films can be represented well by lognormal distribution functions. The EBSD measurements on CuGaSe2 thin film reveal a <110> fiber texture, in good agreement with x-ray diffraction texture analysis performed on the same sample. The EBSD maps from all samples studied exhibit considerable twinning in the chalcopyrite-type thin films. Indeed, the most frequent types of grain boundaries in these thin films are (near) Σ3 60°-<221> and 71°-<110> twins. It is shown that rotational 180°-<221> twins (which are symmetrically equivalent to 71°-<110>) are more frequently found than anion- or cation-terminated 60°-<221> twin boundaries.

The Ahnet and Mouydir regions of southern Algeria are part of one of the world's largest, almost undeformed exposures of Palaeozoic rocks which exemplify a hitherto poorly known early Variscan development of a Devonian basin and ridge system. This area includes a series of intracratonic basins along the northern margin of the West African Craton which consists (from W to E) of the Reggane Basin, Azel Matti Ridge, Ahnet Basin, Foum Belrem Ridge and Mouydir Basin. The depositional and palaeogeographic interpretation is based on 71 sections in this region, which for the first time were biostratigraphically calibrated by means of conodonts, goniatites and brachiopods. The structural evolution during Devonian times was probably controlled by reactivation of ancient N–S- to NW–SE-running faults in the Precambrian basement, which caused differential subsidence and uplift of a previously largely unstructured siliciclastic shelf. A hiatus during Emsian times indicates widespread emergence during this interval. The entire area was flooded during the earliest Eifelian, when the first vestiges of the Azel Matti Ridge become evident by stratigraphic condensation. The palaeogeographic differentiation is most apparent during the Givetian, when a shoal with reduced carbonate sedimentation was established on the Azel Matti Ridge passing towards the west and east into basinal environments of the Reggane and Ahnet basins, respectively. The Foum Belrem Ridge is distinguished by increased subsidence during the early Givetian and by revived uplift during the late Givetian. In the Mouydir Basin further east, up to 1000 m of shales were deposited during the Givetian. The early Frasnian is marked by the ubiquitous sedimentation of black shales and bituminous styliolinites. These lithologies occur repeatedly already during the Middle Devonian and document intermittent anoxic conditions. The basin and ridge topography is levelled by the shallowing-up sequence of up to 1400 m thick upper Frasnian and Famennian shales which grade into a deltaic sequence of uppermost Famennian/Tournaisian sandstones. The up to now only vaguely discriminated lithostratigraphic formations of the Devonian have been biostratigraphically defined in suitable type sections.

Indium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se)2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.

For preparation of ZnO/CdS/Cu(In,Ga)Se2 solar cells, physical vapor deposition (PVD) was employed to deposit CdS buffer layers in ultrahigh vacuum on Se-decapped absorber surfaces, thus realizing an all ‘dry' fabrication process of the device. An 14.1% total area and 14.5% active area efficient ZnO/CdS/Cu(In,Ga)Se2 solar cell under AM1.5 conditions was achieved after annealing the as-prepared solar cells in air. Kelvin probe force microscopy (KPFM) measurements were carried out in-situ to monitor the initial growth of the CdS buffer layer on the absorber, as well as its electronic properties, in particular, the work function. It was observed that the PVD-CdS growth is initially inhibited at the absorber grain boundaries. Quantum efficiency measurements allowed us to suppose that during the initial growth stage a passivation of the grain boundaries occurs. The latter explains the higher short-circuit currents of the cells with PVD-CdS compared to their references with CdS grown by chemical bath deposition (CBD). The beneficial effect of the annealing seems to originate from a formation of a region with higher band gap than that of the absorber bulk and inverted conductivity type at the absorber surface, close to the CdS/Cu(In,Ga)Se2 interface, leading to a dramatic change in the electronic transport properties and finally, to a significant enhancement of the open-circuit voltage. Annealing of the ZnO/PVD-CdS/Cu(In,Ga)Se2 solar cells provides formation of PVDCdS/ Cu(In,Ga)Se2 interface with properties similar to that of reference samples with CBD-CdS.

For laboratory scale devices the transfer of the Cu(In,Ga)Se2 (CIGSe) thin film technology from a rigid float glass substrate to flexible titanium foil is achieved. Here we will highlight the effect of the rough, flexible substrate on the electrical and optical characteristics of the transparent window layers of such devices. The roughness of the substrate may give rise to changes in sheet resistance of the transparent front contact and in the reflectivity of the completed device. However, the devices deposited onto the kind of titanium foil substrate used in this work are smooth enough not to affect the sheet resistance; nevertheless optical effects are enough to affect the process window for an antireflective coating. With the use of an antireflective coating, a maximum efficiency of 17.4% could be reached for 0.5 cm2 area devices on glass.