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Solar Cells prepared with Spray-ILGAR Indium Sulfide buffer layers on Cu(In,Ga)Se2 Absorbers

Published online by Cambridge University Press:  01 February 2011

Nicholas A. Allsop ,
Christian A. Kaufmann ,
Axel Neisser ,
Marin Rusu ,
Andreas Hänsel ,
Martha C. Lux-Steiner  and
Christian H. Fischer
Nicholas A. Allsop
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Christian A. Kaufmann
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Axel Neisser
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Marin Rusu
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Andreas Hänsel
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Martha C. Lux-Steiner
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
Christian H. Fischer
Affiliation:
Department of Solar Energy, Hahn-Meitner-Institute Berlin, GermanyD14109.
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Abstract

Indium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se)2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.23
Copyright
Copyright © Materials Research Society 2005

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