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Enhanced Efficiency of CIGS Thin Film Solar Cells on Polyimide Substrates

Published online by Cambridge University Press:  31 January 2011

Raquel Caballero ,
Christian A. Kaufmann ,
Tobias Eisenbarth ,
Axel Eicke ,
Thomas Unold ,
Reiner Klenk  and
H.W. Schock
Raquel Caballero
Affiliation:
raquel.caballero@helmholtz-berlin.de, HZB, Technology, Berlin, Germany
Christian A. Kaufmann
Affiliation:
kaufmann@helmholtz-berlin.de, HZB, Technology, Berlin, Germany
Tobias Eisenbarth
Affiliation:
tobias.eisenbarth@helmholtz-berlin.de, HZB, Technology, Berlin, Germany
Axel Eicke
Affiliation:
axel.eicke@zsw-bw.de, ZSW, Stuttgart, Germany
Thomas Unold
Affiliation:
unold@helmholtz-berlin.de, HZB, Technology, Berlin, Germany
Reiner Klenk
Affiliation:
klenk@helmholtz-berlin.de, HZB, Heterogeneous Materials, Berlin, Germany
H.W. Schock
Affiliation:
hans-werner.schock@helmholtz-berlin.de, HZB, Technology, Berlin, Germany
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Abstract

The effect of the amount of Na present during the 3-stage growth of CIGS at very low temperature T2 on polyimide (PI) foils is studied. While at higher growth temperatures Na seems to impede In-Ga interdifussion, at very low temperatures it appears to further the process. An increase in Voc for a higher Na concentration can be explained by a higher net carrier concentration as measured by drive level capacitance profiling. Admittance spectroscopy measurements show shallow defects when the Na concentration increases. These results suggest that the main role of Na could be the passivation of InCu donor deep defect, in agreement with Wei's theory. Efficiencies of up to 15.1 % (0.5 cm2 active area with antireflection coating) and 13.6%, 14.1% (1 cm2 total and active area respectively without antireflection coating) for nominal T2=420° C were achieved on PI substrates so far.

Keywords

photovoltaicphysical vapor deposition (PVD)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M02-10
Copyright
Copyright © Materials Research Society 2009

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References

1. Repins, I. Contreras, M.A. Egaas, B. et al. , Progr. Photovol. Res. Appl. 16, 235(2008).Google Scholar
2. Kaufmann, C.A. Caballero, R. Unold, T. et al. , Sol. Energy Mater. Sol. Cells, doi: 10.1016/j.solmat.2008.10.009.Google Scholar
3. Rudmann, D. Brémaud, D., Zogg, H. and Tiwari, A.N. J. Appl. Phys. 97, 084903(2005).Google Scholar
4. Ishizuka, S. Hommoto, H. Kido, N. et al. , Appl. Phys. Express 1, 092303(2008).Google Scholar
5. Gabor, A.M. Tuttle, J.R. Albin, D.S. et al. , Appl. Phys. Lett. 65, 198(1994).Google Scholar
6. Kaufmann, C. A. Neisser, A. Klenk, R. et al. , Thin Solid Films 480-481, 515(2005).Google Scholar
7. Caballero, R. Kaufmann, C.A. Eisenbarth, T. et al. , Thin Solid Films 517, 2187(2009).Google Scholar
8. Caballero, R. Kaufmann, C.A. Eisenbarth, T. et al. , Phys. Status Solidi A, doi: 10.1002/pssa.200881144.Google Scholar
9. Nishiwaki, S. Satoh, T. Hashimoto, Y. et al. , J. Mater. Res. Vol. 16, No. 2, 394(2001).Google Scholar
10. Rudmann, D. Cunha, A.F. da, Kaelin, M. et al. , Appl. Phys. Lett. 84 (7), 1129 (2004).Google Scholar
11. Rau, U. Schmitt, M. Engelhardt, F. et al. , Solid State Communications Vol. 107, No. 2, 59(1998).Google Scholar
12. Erslev, P.T. Lee, J.W. Shafarmann, W.N. et al. , Thin Solid Films 517, 2277(2009).Google Scholar
13. Eisenbarth, T. Unold, T. Caballero, R. et al. , Thin Solid Films 517, 2244(2009).Google Scholar
14. Wei, S.H. Zhang, S.B. and Zunger, A. J. Appl. Phys. 85, 7214(1999).Google Scholar