11 results
Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin
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- Journal:
- MRS Online Proceedings Library Archive / Volume 536 / 1998
- Published online by Cambridge University Press:
- 09 August 2011, 75
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- 1998
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Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 486 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 275
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- 1997
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TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization
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- MRS Online Proceedings Library Archive / Volume 318 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 335
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- 1993
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Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 149 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 271
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- 1989
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The Effect of Hydrogen Dilution of the Gas Plasma on Glow Discharge a-Ge:H
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- Journal:
- MRS Online Proceedings Library Archive / Volume 149 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 69
- Print publication:
- 1989
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Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H
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- Journal:
- MRS Online Proceedings Library Archive / Volume 149 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 187
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- 1989
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Thermal Equilibrium in a-Si:H N+-P-P+ and P+-N-N+ Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 118 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 315
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- 1988
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Increase of Doping Efficiency During Light Exposure in P-Type Hydrogenated Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 118 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 189
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- 1988
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Characterization of Heavily Boron-Doped a-Si:H Films Deposited at Low Substrate Temperatures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 565
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- 1987
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Changes of IR Vibrational Absorption by Light Soaking in Hydrogenated Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 595
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- 1987
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Temperature and Light Intensity Dependences of Open Circuit Voltage in a-Si: H Pin Solar Cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 70 / 1986
- Published online by Cambridge University Press:
- 28 February 2011, 543
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- 1986
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