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Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

Published online by Cambridge University Press:  25 February 2011

Byung-Seong Bae ,
Deok-Ho Cho ,
Jae-Hee Lee ,
Choochon Lee  and
Jin Jang
Byung-Seong Bae
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology Cheongyang P.O. Box 150, Seoul, Korea
Deok-Ho Cho
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology Cheongyang P.O. Box 150, Seoul, Korea
Jae-Hee Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology Cheongyang P.O. Box 150, Seoul, Korea
Choochon Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology Cheongyang P.O. Box 150, Seoul, Korea
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemun-ku, Seoul, Korea
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Abstract

We investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 271
Copyright
Copyright © Materials Research Society 1989

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References

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