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Increase of Doping Efficiency During Light Exposure in P-Type Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Jin Jang ,
Sung Chul Kim ,
Seung Chul Park ,
Jae Boong Kim ,
Hye Yong Chu  and
Choochon Lee
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Seung Chul Park
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Jae Boong Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Hye Yong Chu
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea Dept. of Physics, KAIST, P.O.Box 150 Chongyang, Seoul, Korea
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Abstract

Light soaking gives rise to the increase of active acceptors as well as to the creation of dangling bonds in boron doped hydrogenated amorphous silicon. The annealing out of the metastable active dopants is slow compared with that of the created dangling bonds, results in higher conductivity than annealed value during heating the sample upon light soaking. The activation energy of the relaxation time for the metastable active dopants is ˜0.1 eV higher than that for the annealing of the created dangling bonds. We ropose a new model to explain our results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 189
Copyright
Copyright © Materials Research Society 1988

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