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Temperature and Light Intensity Dependences of Open Circuit Voltage in a-Si: H Pin Solar Cells

Published online by Cambridge University Press:  28 February 2011

Jin Jang  and
Choochon Lee
Jin Jang
Affiliation:
Dept. of Physics and Research Inst. for Basic Sciences, Kyung Hee University Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics, Korea Advanced Inst. of Science & Technology, P.O.Box 150 Chongyang, Seoul, Korea
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Abstract

The temperature and incident light intensity dependences of open circuit voltage for hetero-and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from -2.40 to -2.67 mV/°C as the illumination intensity is decreased from 150 to 7mW/cm2 This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values(l.6–3.0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1.5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 543
Copyright
Copyright © Materials Research Society 1986

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References

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