We report fourteen and twenty-eight protocluster candidates at z = 5.7 and 6.6 over 14 and 19 deg2 areas, respectively, selected from 2,230 Lyα emitters (LAEs) photometrically identified with Subaru/Hyper Suprime-Cam (HSC) deep images. Six out of the 42 protocluster candidates include at least 1 spectroscopically confirmed LAEs at redshifts up to z = 6.574. By the comparisons with the cosmological Lyα radiative transfer (RT) model reproducing LAEs with the reionization effects, we find that more than a half of these protocluster candidates might be progenitors of the present-day clusters with a mass of ≳ 1014M⊙. We also investigate the correlation between LAE overdensity and Lya rest-frame equivalent width (EW), because the cosmological Lyα RT model suggests that a slope of EW-overdensity relation is steepened towards the epoch of cosmic reionization (EoR), due to the existence of the ionized bubbles around galaxy overdensities easing the escape of Lyα emission from the partly neutral intergalactic medium. The available HSC data suggest that the slope of the EW-overdensity correlation does not evolve from the post-reionization epoch z = 5.7 to the EoR z = 6.6 beyond the moderately large statistical errors.

A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

High-energy protons are generated by focusing an ultrashort pulsed high intensity laser at the Advanced Photon Research Center, JAERI-Kansai onto thin (thickness <10 μm) Tantalum targets. The laser intensities are about 4 × 1018 W/cm2. The prepulse level of the laser pulse is measured with combination of a PIN photo diode and a cross correlator and is less than 10−6. A quarter-wave plate is installed into the laser beam line to create circularly polarized pulses. Collimated high energy protons are observed with CH coated Tantalum targets irradiated with the circularly polarized laser pulses. The beam divergence of the generated proton beam is measured with a CR-39 track detector and is about 6 mrad.

Room-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

Asynthesized calculation model for developing metallic glasses has been created by taking into account criteria for the achievement of high glass-forming ability (GFA) and viscosity. The model deals with amorphous-forming composition region (AFCR), crystallization temperature (Tx) and three GFA factors: critical cooling rate (Rc), reduced glass-transition temperature (Tg/Tm) and supercooled liquid region (ΔTx=Tx-Tg) where Tg and Tm are glass transition and melting temperature, respectively. The principle of the model is based on thermodynamic functions for multicomponent systems, i.e., mismatch entropy and mixing enthalpy which express the criteria in terms of the number of elements, atomic size differences and the heat of mixing. By combining these thermodynamic quantities with the Miedema's semi-empirical model, AFCR was calculated, and was compared with the experimental results. The GFA factors were also analyzed from viscosity. The Rc was derived from transformation diagram of metallic glasses for crystallization while ΔTx was calculated by solving a differential equation expressing the change in free volume with temperature. As a result of these analyses, Rc-Tg/Tm and R-ΔTx diagrams were found to fit with the experimental results qualitatively. Furthermore, crystallization temperature (Tx) was also calculated for multicomponent metallic glasses by the modification of the Miedema's binary model for the calculation of Tx. The reduced crystallization temperature (Tx/Tl), where Tl is liquidus temperature, was calculated for evaluating GFA of metallic glasses instead of Tg/Tm. Some of the calculation methods used in the present study have theadvantage giving results as a function of composition; thus, there exists possibility to lead to the prediction of glassy alloys compositions. In this sense, the present calculation methods are completely different to the current method for the development of new metallic glasses relying on the empirical criteria which suggest only appropriate systems and/or elements of the alloysfor the achievement of high GFA. In near future, this kind of calculation technique can be used for the prediction of optimal compositions of the metallic glasses with high GFA.

We examined numerous ovarian follicles from 32–35 d virgin mice by transmission electron microscopy and light microscopic immunohistochemistry. No macrophages were seen, but various stages of apoptotic granulosa cells were encountered. Presumably a granulosa cell or its debris in an advanced stage of apoptosis was destined to be phagocytosed by adjacent normal-looking granulosa cells. Other granulosa cells of normal appearance were seen in the region of the zona pellucida in contact with and apparently phagocytosing atrophic oocytes. Such granulosa cells were characterised by the presence of gap junctions with other cells and frequently contained annular gap junctions in the cytoplasm. To confirm the lack of involvement of macrophages in the process of follicular atresia and elimination, specially prepared ovarian sections were incubated with antimouse macrophage monoclonal antibodies (F4/80, Mac-1, Mac-2). None of the follicles examined showed positive immunoreactivity with these antibodies. Atretic follicles may shrink and eventually disappear from the ovary as a result of repeated apoptosis and phagocytosis by granulosa cells. There is no evidence for the presence or involvement of macrophages in the atretic follicles, at least in prereproductive mice as examined.

A high-concentration ozone generator operating at atmospheric pressure has been developed for fabrication of ultra thin silicon oxide films. The generator can supply atmospheric pressure of ozone jet with ozone concentration up to 80 vol%. The ozone jet is generated by desorbing ozone at nearbyn room temperature, which has been condensed on silica-gel by passing ozone/oxygen mixture gas from a commercial ozonizer at a low temperature (<-50°C); at the temperature ozone is more selectively adsorbed on silica-gel than oxygen. The high purity ozone jet with a concentration of 25 vol% at a pressure of 1 × 105 Pa had so large oxidation power that SiO2 film as thick as 3.3 nm grew on a Si surface after 60 min exposure at 375°C. The density of the film was equivalent to that of the film formed by a conventional thermal oxidation process, judging from etching rate with dilute HF solution.

Rayleigh surface wave velocities in Ag/Cr and Au/Cr metallic superlattices have been measured by Brillouin scattering spectroscopy. These metallic superlattices were prepared by the metal-MBE method. X-ray diffraction measurements indicated that the structures of Ag/Cr and Au/Cr superlattices were almost the same. In the Au/Cr superlattices a maximum in a plot of surface wave velocities as a function of the bilayer thickness was observed. On the contrary, a distinct dip was shown in Ag/Cr systems. This anomalous behavior of the sound velocity could not be attributed to the expansion and the contraction of the lattices. Differences in atomic scale structure in the interface seem to play a major role in these systems.

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Effects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been studied with X-ray photoelectron spectroscopy, capacitance-voltage measurements and deep-level transient spectroscopy. SiO2 films of 50, 200 and 1250 nim thickness have been deposited on GaAs. RTP has been performed at 760 and 910°C for 9 s. The rapid diffusion of Ga through the SiO2 film occurs, and the As loss and the formation of the As layer near the interface are observed. The decrease of the carrier concentration occurs in all RTP samples. Five electron traps EAI (Ec – 0.27 eV), EA2 (Ec – 0.32 eV), EA3 (Ec – 0.47 eV), EA4 (Ec – 0.58 eV) and EL2 (Ec – 0.78 eV) are produced by RTP. It is considered that the production of the trap EL2 is closely related to the Ga outdiffusion into the SiO2 film and the As indiffusion from the pile-up of elemental As near the interface. Effects of SiO2 film thickness on RTP-SiO2/GaAs are also reported.

Effects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been investigated with Auger electron spectroscopy and X-ray photoelectron spectroscopy. SiO2 films of 100, 175, 200 and 1250 nm thickness have been deposited on liquid encapsulated Czochralski-grown (100) n-type GaAs wafers by the RF sputtering method. RTP has been performed at 800°C for 6 s. For comparison, conventional furnace processing (CFP) has also been performed at 800°C for 20 min for 200-nm-thick SiO2/GaAs. The Ga is observed on the outer SiO2 surface for RTP samples as well as CFP samples. This indicates that the outdiffusion of Ga occurs after only 6 s at 800°C even through 1250-nm-thick SiO2 films. The depth profile of Ga reveals the pile-up of Ga on the outer SiO2 surface for both RTP and CFP samples. The amount of Ga on the outer surface gradually increases in the thickness range 1250 to 175 nm. The As is also observed on the outer surface. The amount of Ga and As on the outer surface rapidly increases at 100 nm thickness. Electron traps in RTP samples have been studied with deep-level transient spectroscopy. Different electron traps are produced in GaAs by RTP between 100-nm- and 200-nm-thick SiO2/GaAs. It is thought that the production of different traps by RTP is related to the amount of Ga and As loss through SiO2 films from GaAs.

The prophylactic effects of carbamazepine (CBZP) were studied in 32 patients with affective disorder who were receiving long-term therapy with CBZP. Complete inhibition of both manic and depressive episodes was observed in four cases, reduced incidence of episodes or decreased intensity of symptoms in twenty, and no change in eight. CBZP was significantly more effective in cases with an onset before the age of 20, and subjects showing a continuous pattern of alternating episodes responded better than those with a more intermittent history of mania and depression. Where CBZP had an effect it was generally apparent soon after therapy started. These results suggest that in some cases CBZP is an agent suitable for long-term continuous prophylactic therapy in manic-depressive disorder.