12 results
Nanostructural C-Al-N thin films studied by x-ray photoelectron spectroscopy, Raman and high-resolution transmission electron microscopy
-
- Journal:
- Journal of Materials Research / Volume 24 / Issue 11 / November 2009
- Published online by Cambridge University Press:
- 31 January 2011, pp. 3321-3330
- Print publication:
- November 2009
-
- Article
- Export citation
Effect of carbon content on thermal stability of Ti–Cx–Ny thin films
-
- Journal:
- Journal of Materials Research / Volume 23 / Issue 3 / March 2008
- Published online by Cambridge University Press:
- 31 January 2011, pp. 671-678
- Print publication:
- March 2008
-
- Article
- Export citation
Nanostructure evolution and properties of two-phase nc-Ti(C, N)/a-(C, CNx) nanocomposites by high-resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy
-
- Journal:
- Journal of Materials Research / Volume 22 / Issue 9 / September 2007
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2460-2469
- Print publication:
- September 2007
-
- Article
- Export citation
Grain growth in nanocomposite Ti–B–N films during deposition: The effect of amorphous phase precipitation
-
- Journal:
- Journal of Materials Research / Volume 21 / Issue 1 / January 2006
- Published online by Cambridge University Press:
- 01 January 2006, pp. 82-87
- Print publication:
- January 2006
-
- Article
- Export citation
Effect of silicon addition on surface morphology and structural properties of titanium nitride films grown by reactive unbalanced direct current-magnetron sputtering
-
- Journal:
- Journal of Materials Research / Volume 19 / Issue 2 / February 2004
- Published online by Cambridge University Press:
- 03 March 2011, pp. 523-534
- Print publication:
- February 2004
-
- Article
- Export citation
Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.42.1
- Print publication:
- 2001
-
- Article
- Export citation
Structural Properties of Laterally Overgrown GaN
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 111-116
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.24
- Print publication:
- 2000
-
- Article
- Export citation
Fabrication and Characterization of Metalferroelectric-GAN Structures
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 598-604
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Oxidation of Gallium Nitride Epilayers in Dry Oxygen
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 866-872
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Fabrication and Characterization of Metal-Ferroelectric-Gan Structures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.5
- Print publication:
- 1999
-
- Article
- Export citation
Oxidation of Gallium Nitride Epilayers in Dry Oxygen
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.71
- Print publication:
- 1999
-
- Article
- Export citation