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Using polygenic scores and clinical data for bipolar disorder patient stratification and lithium response prediction: machine learning approach – CORRIGENDUM
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- Journal:
- The British Journal of Psychiatry / Volume 221 / Issue 2 / August 2022
- Published online by Cambridge University Press:
- 04 May 2022, p. 494
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- August 2022
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Using polygenic scores and clinical data for bipolar disorder patient stratification and lithium response prediction: machine learning approach
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- Journal:
- The British Journal of Psychiatry / Volume 220 / Issue 4 / April 2022
- Published online by Cambridge University Press:
- 28 February 2022, pp. 219-228
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- April 2022
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Characterisation of age and polarity at onset in bipolar disorder
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- Journal:
- The British Journal of Psychiatry / Volume 219 / Issue 6 / December 2021
- Published online by Cambridge University Press:
- 25 August 2021, pp. 659-669
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- December 2021
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Study of a luminescent and antibacterial biomaterial based on hydroxyapatite as support for an antineoplastic drug
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- Journal:
- Journal of Materials Research / Volume 34 / Issue 11 / 14 June 2019
- Published online by Cambridge University Press:
- 07 May 2019, pp. 1922-1930
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- 14 June 2019
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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 27 November 2012, pp. 104-112
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- 14 January 2013
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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 30 August 2012, pp. 94-103
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- 14 January 2013
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Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-07
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- 2010
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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
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- MRS Online Proceedings Library Archive / Volume 911 / 2006
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- 01 February 2011, 0911-B10-02
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- 2006
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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B02-01
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- 2006
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