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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Published online by Cambridge University Press:  01 February 2011

Francesco La Via ,
Giuseppa Galvagno ,
Andrea Firrincieli ,
Salvatore Di Franco ,
Andrea Severino ,
Stefano Leone ,
Marco Mauceri ,
Giuseppe Pistone ,
Giuseppe Abbondanza  and
Ferdinando Portuese
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Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, SiC growth, Stradale Primosole 50, 95121, Catania, N/A, N/A, Italy, ++39 095 5968229, ++39 095 5968312
Giuseppa Galvagno
Affiliation:
ggalvagno@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Firrincieli
Affiliation:
afirry@gmail.com, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Salvatore Di Franco
Affiliation:
salvatore.difranco@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Severino
Affiliation:
andrea.severino@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Stefano Leone
Affiliation:
s.leone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Marco Mauceri
Affiliation:
m.mauceri@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Pistone
Affiliation:
g.pistone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Abbondanza
Affiliation:
g.abbondanza@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Ferdinando Portuese
Affiliation:
portuese@tin.it, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Lucia Calcagno
Affiliation:
lucia.calcagno@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
Gaetano Foti
Affiliation:
gaetano.foti@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
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Abstract

Practical design of high-voltage SiC Schottky rectifiers requires the understanding of the influence of the epitaxial dopant concentration on the reverse and forward characteristics. This work analyzes the correlation between the dopant concentration and the I-V characteristics of Schottky diodes for a critical concentration range where the leakage current variations are more evident. The details of how high temperatures affect the properties of junctions have been carefully described to obtain further improvement in the future by proper device optimization. Dopant concentration of about 1.2 × 1016 cm-3 gives the best results in reverse characteristics without great losses in forward currents.

Keywords

devicesdopantepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-02
Copyright
Copyright © Materials Research Society 2006

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References

[1] Padovani, F. A., Stratton, R.: Solid State Electronics 9, 695 (1966).Google Scholar
[2] Wang, Y., Ali, G. N., Milkhov, M. K., Vaidyanathan, V., Skromme, B. J., Raghothamachar, B., and Dudley, M., Journal of Applied Physics 97, 013540 (2005).Google Scholar
[3] Kojima, K., Ohno, T., Fujimoto, T., Katsuno, M., Ohtani, N., Nishio, J., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., and Arai, K., Materials Science Forum 433–436, 925 (2003).Google Scholar
[4] Via, F. La, Galvagno, G., Roccaforte, F., Ruggiero, A., and Calcagno, L., Appl. Phys. Lett. (accepted for publication).Google Scholar
[5] Weitzel, E., Palmour, J. W., Carter, C. H., Moore, K., Nordquist, K. J., Allen, S., and Thero, C., IEEE Trans. Electron Devices 43, 1732 (1996).Google Scholar
[6] Spiazzi, G., Buso, S., Citron, M., Pierobon, R., Corradin, M., IEEE Trans. Power El. 18 n.6, 1249 (2003).Google Scholar