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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

Published online by Cambridge University Press:  27 November 2012

Massimo Camarda ,
Ruggero Anzalone ,
Andrea Severino ,
Nicolò Piluso ,
Andrea Canino ,
Francesco La Via  and
Antonino La Magna
Massimo Camarda*
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Ruggero Anzalone
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Andrea Severino
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Nicolò Piluso
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Andrea Canino
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Francesco La Via
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
Antonino La Magna
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, 95121 Catania, Italy
*
a)Address all correspondence to this author. e-mail: massimo.camarda@imm.cnr.it
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Abstract

In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. We have extended these stress-deflection relations in the case of nonlinear stress fields and validated the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discovered that, due to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques alone may not enable determination of the stress field in the grown films either quantitatively or qualitatively.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 104 - 112
Copyright
Copyright © Materials Research Society 2012

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References

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