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Due to the lack of an effective prophylactic intervention and diagnosis, human liver fluke Clonorchis sinensis continues to afflict a large human population, causing a chronic inflammatory bile duct disease. With an aim to identify target antigens for sensitive serodiagnosis, adenylate kinase 3 of C. sinensis (CsAK3) was successfully expressed in soluble form in Escherichia coli by fusion to an RNA-interacting domain derived from human Lys-tRNA synthetase and purified by Ni2+-affinity chromatography. Anti-CsAK3 serum was raised by immunization of mice, and Western blotting confirmed that CsAK3 was expressed in adult-stage C. sinensis. Histochemical analysis showed that CsAK3 was localized to the subtegumental tissue of C. sinensis and was excreted into the bile duct of the host. When tested against sera from various parasite-infected patients by enzyme-linked immunosorbent assay, the recombinant CsAK3 elicited a specific response to C. sinensis-infected sera. The results suggest that CsAK3, either alone or in combination with other antigens, could be used for improving the clinical diagnosis of clonorchiasis.
The aim of this study is to develop predictive models to predict organ at risk (OAR) complication level, classification of OAR dose-volume and combination of this function with our in-house developed treatment decision support system.
Materials and methods
We analysed the support vector machine and decision tree algorithm for predicting OAR complication level and toxicity in order to integrate this function into our in-house radiation treatment planning decision support system. A total of 12 TomoTherapyTM treatment plans for prostate cancer were established, and a hundred modelled plans were generated to analyse the toxicity prediction for bladder and rectum.
The toxicity prediction algorithm analysis showed 91·0% accuracy in the training process. A scatter plot for bladder and rectum was obtained by 100 modelled plans and classification result derived. OAR complication level was analysed and risk factor for 25% bladder and 50% rectum was detected by decision tree. Therefore, it was shown that complication prediction of patients using big data-based clinical information is possible.
We verified the accuracy of the tested algorithm using prostate cancer cases. Side effects can be minimised by applying this predictive modelling algorithm with the planning decision support system for patient-specific radiotherapy planning.
Construction of a new science complex in Osong, Cheongwon-gun, Korea, has allowed the investigation of 14 different Paleolithic localities, excavated during 2005–2007. Here, we investigated localities 1 and 12 of the Mansuri Paleolithic site to obtain chronological information using radiocarbon dating. The soil deposition rates varied from 0.09 to 0.15 mm/yr over the period ranging from 33 to 31 kyr BP for locality 1. Locality 12 samples were more recent, <10 ka, and have similar accumulation rates, averaging 0.11 mm/yr. The soil ages of locality 12 were found to be younger than 10 kyr BP. Results for both soil and organic materials at this locality gave much younger ages at shallower depths than the ages expected by the Korean Paleolithic cultural history for this region. Therefore, these more recent deposits may not be associated with the cultural layers and are interpreted to have been hydrologically modified following emplacement. 14C dates of the soil and organic materials at locality 12 confirm that there is evidence for multiple human occupations throughout the last 9 kyr BP.
The YSTAR program is a general sky survey looking for variability. The main equipments are three 0.5-m telescopes. These telescopes have fast F/2 optics covering nearly 3.5 square degree field onto a 2K CCD. They also have very fast slew capability, which exceeds 10 degrees per second. These two factors make them most suitable for rapid target acquisition and wide-field surveys of various kinds. Our primary objective is to identify and monitor variable stars down to 18th R-magnitude, and our observing mode allows the same data set to be also useful in identifying asteroids. Our first telescope has just begun regular automated operation, and the second telescope will be installed in South Africa within this year to provide coverage of the southern sky.
In 2000, Korea Astronomy Observatory launched the Near-Earth Object Patrol (NEOPAT) program. NEOPAT has conducted follow-up observations of NEOCP (NEO Confirmation Page) objects and discovered 52 new main-belt asteroids during the observation runs. We initiated collaboration with the Yonsei Survey Telescopes for Astronomical Research (YSTAR) team for NEO search. Wide-field of view, fast read-out time, and fully autonomous data pipeline will enable us to detect and track NEOs with a high efficiency. Scheduled to begin active operations in mid-2001, our survey system is going to be the first network of robotic telescopes for NEO search with automatic access to both hemispheres.
This study examined changes in health-related quality of life (HRQoL) and quality of care (QoC) as perceived by terminally ill cancer patients and a stratified set of HRQoL or QoC factors that are most likely to influence survival at the end of life (EoL).
We administered questionnaires to 619 consecutive patients immediately after they were diagnosed with terminal cancer by physicians at 11 university hospitals and at the National Cancer Center in Korea. Subjects were followed up over 161.2 person-years until their deaths. We measured HRQoL using the core 30-item European Organization for Research and Treatment of Cancer Quality of Life Questionnaire, and QoC using the Quality Care Questionnaire–End of Life (QCQ–EoL). We evaluated changes in HRQoL and QoC issues during the first three months after enrollment, performing sensitivity analysis by using data generated via four methods (complete case analysis, available case analysis, the last observation carried forward, and multiple imputation).
Emotional and cognitive functioning decreased significantly over time, while dyspnea, constipation, and pain increased significantly. Dignity-conserving care, care by healthcare professionals, family relationships, and QCQ–EoL total score decreased significantly. Global QoL, appetite loss, and Eastern Cooperative Oncology Group Performance Status (ECOG–PS) scores were significantly associated with survival.
Significance of results:
Future standardization of palliative care should be focused on assessment of these deteriorated types of quality. Accurate estimates of the length of life remaining for terminally ill cancer patients by such EoL-enhancing factors as global QoL, appetite loss, and ECOG–PS are needed to help patients experience a dignified and comfortable death.
Mutation breeding techniques have been used to induce new genetic variations and improve agronomic traits in soybean. In Korea, the Korea Atomic Energy Research Institute (KAERI) has unique radiation facilities to induce plant mutations and has been conducting soybean mutation breeding programmes since the mid-1960s. Until now, the KAERI has developed five soybean mutant cultivars exhibiting early maturity, high yield and seed-coat colour change. In this paper, we review these five mutant cultivars in terms of how to successfully induce unique agronomic characteristics through mutation breeding programmes. A number of induced mutants exhibiting null lipoxygenase enzymes, altered protein patterns or Kunitz trypsin inhibitor activity could serve as genetic resources for the genetic analysis of target genes, and one mutant population has been developed for a reverse genetic study.
Blackberry is a fruiting berry species with very high nutrient contents. With the recent increasing consumer demand for blackberries, new sources of germplasm and breeding techniques are required to improve blackberry production. This study was carried out to evaluate the genetic diversity (GD) and relationship among 55 blackberry (Rubus fruticosus) mutants derived from γ-ray treatment (52 lines) and N-methyl-N′-nitrosourea (MNU) treatment (three lines) using an inter-simple sequence repeat marker. A total of 18 bands were amplified with an average of 3.6 bands per primer. Among them, eight bands were identified to be polymorphic with a rate of 44.4%. In addition, the GD information content values were highest in the 60 Gy treatment population and the GD values were higher in the γ-ray treatment populations than in the MNU treatment population. According to a cluster analysis, all the mutant lines can be classified into five categories, and the genetic distance was greatest between the 80 Gy-irradiated population and other populations. These results indicate that mutant lines have high GD and can be effectively utilized for improving blackberry breeding.
Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.
A direct synthesis of carbon nanotubes (CNTs) on substrates by chemical vapor deposition (CVD) is one of highly probable routes to reach their application to field emission displays. Several stringent requirements are prerequisite for this purpose, including low temperature growth below 600°C to engage glass substrates and large area deposition for practical use. This study carried out synthesis of CNTs by thermal CVD on glass substrates at temperatures as low as 500~550°C. CNTs were grown by thermal decomposition of CO and H2 gases at an atmospheric pressure for different thickness of Invar (an Fe-Ni-Co alloy ) catalytic layers. The growth of CNTs was strongly correlated with preparation of catalytic layers. The diameters and heights of as-grown CNTs increased as the catalytic layers became thicker from 2nm to 30nm. Measurements of the field emission properties of CNTs showed that the threshold electric fields were lowered with increasing thickness of catalytic layers. A uniform electron emission was observed over a large area of 150 × 150mm2, with high emission currents and high brightness.
Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.
Effects of Pt and W2N/W bottom electrodes on dielectric properties of 1000 Å thick BaTiO3 thin film capacitors are studied. The tetragonality of BaTiO3 on W2N/W electrode is better than that of BaTiO3 on Pt electrode and leakage current of W2N/W/BaTiO3/Au capacitor is four orders of magnitude less than that of Pt/BaTiO3/Au capacitor. The excellent properties of W2N/W/BaTiO3/Au capacitor is ascribed to both of the tetragonal structure of WO3 formed at the interface of W/BaTiO3 and the diffusion barrier property of W2N preventing the interfacial reaction among bottom electrodes, BaTiO3, and Si.
We present a new analytical model of amorphous silicon thin-film transistor (a-Si TFT) suitable for circuit simulators such as SPICE. The effects of localized gap state distributions of a-Si as well as temperatures on the a-Si TFT performances have been fully considered in the presented model. The parameters used in SPICE, such as transconductance, channel-length modulation, and power factor of source-drain current, are evaluated from the measured current-voltage and capacitance-voltage characteristics by employing the proposed extraction method. It has been found out that the analytical model is in good agreement with experimental data at both room temperature and elevated temperature and successfully implemented in a widely used circuit simulator.
Plasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.
An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600 – 800 °C for 30 min. Experimental evidence such as RBS, TEM, XRD measurements shows that the amorphized tungsten nitride layer perfectly blocks the expeditious diffusion of the Cu film due to the amorphous grain boundaries stuffed with N impurities.
Ferroelectric BaTiO 3 thin films with perovskite structure were grown by sol-gel spin-on processing onto (111)Pt/Ti/SiO2/Si substrates. In order to investigate the effects of space charge in BaTiO3 thin films, we measured the relative dielectric constant and the ac conductivity of the films as a function of frequency, ac oscillation amplitude and temperature. Dielectric constant and dielectric loss were 147 and 0.03 at 100 kHz, respectively. Also, BaTiO3 thin films exhibited marked dielectric relaxation above the Curie temperature and in the low frequency region below 100 Hz. This low frequency dielectric relaxation is attributed to the ionized space charge carriers such as oxygen vacancies and defects in BaTiO3 film and the interfaical polarization. The thermal activation energy for the relaxation process of the ionized space charge carriers was 0.72 eV.
Microwave heating was utilized for the first time for solid phase crystallization of amorphous silicon films. Microwave heating lowered annealing temperature and reduced the annealing time for complete crystallization. For example, the amorphous silicon film deposited at 400 °C was fully crystallized in 3 h at 550 °C below which glass is available as a substrate. On microwave heating, the hydrogen in the amorphous films diffused out very quickly, but there was no change in structural disorder following hydrogen evolution. The lower temperature crystallization of a-Si films compared to conventional furnace annealing is due to the interaction between microwave and silicon atoms. The grain size of the crystallized silicon films was in the range of 0.55 to 0.78 μm, depending on the deposition temperature. These grain sizes are not so small comparing those of Si films by conventional furnace heating, while the crystallization processing time is much shorter.
Pt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.
The effect of a post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) was studied. Also, the thermal stability of an electrodeposited Cu / sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective in prevention of water absorption. The Cu/Ta/SiOF/Si system was thermally stable at least up to 500°C for 3h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a big role in suppressing the interdiffusion between SiOF and metal interconnects. By C-V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 2 h.