In this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the substrate resulting in poor crystallinity in general. Substantial improvement in the film crystallinity can be obtained when the deposition is made on layered substrates, with saturated surface bonds, as observed in SnS films deposited on mica and crystalline substrates with a graphene buffer layer. Crystal size as large as one micron and rocking curve FWHM of 0.118° was observed despite the large lattice mismatches. This represents significant improvement over the reported value of ∼3°. Several symmetric growth orientations are observed for films grown on mica substrates. The results indicate that weak vdW interactions between the saturated bonds of the substrate surface and the SnS unit layer which is an important factor for achieving high quality epitaxy layered materials.