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Characterization of Flicker Noise in GaN Based Modfets at Low Drain Bias

Published online by Cambridge University Press:  15 February 2011

W.Y. Hol ,
W.K. Fong ,
C. Suryal ,
K.Y. Tong ,
W. Kim ,
A. Botcharev  and
H. Morkoc
W.Y. Hol
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
W.K. Fong
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
C. Suryal
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
K.Y. Tong
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
W. Kim
Affiliation:
Department of Electrical and Computer Engineering and Coordinated Science Laboratory, University of Illinois, U.S.A.
A. Botcharev
Affiliation:
Department of Electrical and Computer Engineering and Coordinated Science Laboratory, University of Illinois, U.S.A.
H. Morkoc
Affiliation:
Department of Electrical and Computer Engineering and Coordinated Science Laboratory, University of Illinois, U.S.A.
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Abstract

We report systematic characterizations of flicker noise in GaN based MODFETs. Flicker noise was measured across the channel of the devices from room temperature to 130 K. The voltage noise power spectra, Sv(f) were found to be proportional to l/f, where γ depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and was found to vary as VD2/(VG-VT)β where β changes with temperature from about 2.1 at room temperature to about 0.9 at 130K. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The data suggested that the trapping and detrapping of carriers did not lead to fluctuations in the carrier concentration as postulated in the McWhorter's model. However, more work is needed to determine if surface mobility fluctuations played key role in the l/f noise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.5
Copyright
Copyright © Materials Research Society 1999

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