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Ultra-high Be doping of Ga0.47In0.53 As layers grown by gas source molecular beam epitaxy has shown that for each growth temperature, there exists a maximum hole concentration (≥1×1020cm-3). Increasing the Be flux above that which produces the maximum hole concentration results in a degradation of the crystalline quality of the films. The degradation of film quality results from precipitation of a Be-rich phase on the surface during growth and nucleation of dislocations at each precipitate. Below that concentration, some of the Be segregates and floats on the growing surface.
Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, kinetic roughening is observed. At temperatures higher than smooth morphologies are obtained. From the dependence of on the substrate Misorientation, we estimate a value of ∼0.4–0.5eV for the Schwoebel barrier. At growth temperatures higher than we observe two types of defects: large oval defects related only to the initial conditions of the substrate surface and small defects with the density strongly dependent on the growth condition. Increasing temperature above or decreasing V/III ratio, results in increased density of these defects. In addition, their density increases with an activation energy that depends on the substrate Misorientation. The origin of the oval defects is attributed to non-stoichiometric, P-defficient, clusters on the growing surface, formed either by enhanced cracking of metalorganic s on the substrate due to the presence of contaminants or by a low V/III ratio used for growth.
We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8V to IOV, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90kA/cm2 and a collector bias, VCE, of 2V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2 × 4 μm2 emitter size devices.
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