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Precipitation Phenomena Associated with Ultra-High Be Doping in Ga0.47In0.53P Layers grown by MBE

Published online by Cambridge University Press:  25 February 2011

C.M. Cotell ,
M.B. Panish ,
R.A. Hamm ,
L.C. Hopkins  and
J.M. Gibson
C.M. Cotell
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M.B. Panish
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R.A. Hamm
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L.C. Hopkins
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Ultra-high Be doping of Ga0.47In0.53 As layers grown by gas source molecular beam epitaxy has shown that for each growth temperature, there exists a maximum hole concentration (≥1×1020cm-3). Increasing the Be flux above that which produces the maximum hole concentration results in a degradation of the crystalline quality of the films. The degradation of film quality results from precipitation of a Be-rich phase on the surface during growth and nucleation of dislocations at each precipitate. Below that concentration, some of the Be segregates and floats on the growing surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 861
Copyright
Copyright © Materials Research Society 1990

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References

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