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Polycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.
Convergent beam electron diffraction (CBED) was applied to the local measurement of lattice parameter across a strained interface with small mismatch. GaAs layers grown at low temperature with excess As (with 0.15% misfit) on a GaAs substrate were chosen for these studies. Tetragonal distortion was detected in the layer up to 0.5μm from the interface. With an increase of the layer thickness lowering of the symmetry of these CBED patterns was observed. This lowering of symmetry is most probably due to saturation of As solubility and the strain build into these layer.
We fabricated SiO2/Au nanocomposites using alternate sputtering method. The size of the Au particles seem was unchanged by the SiO2 sputtering and well controllable by the sputtering parameters. The nanoparticles in SiO2 were observed by TEM and the nanocomposites were characterized using XPS technique. TEM observation revealed the size of Au nanoparticles to be 2–15 nm. We observed a chemical shift of the Au4f peak in the XPS study. We demonstrate the efficiency of the technique for controlling the size and quantity of nanoparticles dispersed in nanocomposites.