11 results
Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 447-452
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 594-599
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G4.3
- Print publication:
- 1998
-
- Article
- Export citation
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e6
- Print publication:
- 1998
-
- Article
-
- You have access
- HTML
- Export citation
A Critical Comparison Between Movpe and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G5.10
- Print publication:
- 1998
-
- Article
- Export citation
MBE Growth and Characterization of Small Band Gap HgTe-HgCdTe Superlattices.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 363
- Print publication:
- 1989
-
- Article
- Export citation
Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 159
- Print publication:
- 1989
-
- Article
- Export citation
Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 133
- Print publication:
- 1989
-
- Article
- Export citation
Properties of Modulation-Doped HgCdTe Superlattices
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 263
- Print publication:
- 1989
-
- Article
- Export citation
Local Bonding in A—Sige Alloy Films
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 49 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 135
- Print publication:
- 1985
-
- Article
- Export citation
HRTS Evidence for Rotation of Transition Region Temperature Spicules
-
- Journal:
- International Astronomical Union Colloquium / Volume 86 / 1984
- Published online by Cambridge University Press:
- 12 April 2016, pp. 32-35
- Print publication:
- 1984
-
- Article
-
- You have access
- Export citation