Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T05:03:40.284Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

D.L. Dreifus ,
Y. Lansari ,
J.W. Han ,
S. Hwang ,
J.W. Cook Jr.  and
J.F. Schetzina
D.L. Dreifus
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695-7911
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.W. Han
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.W. Cook Jr.
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
Get access

Abstract

II-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 159
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Irvine, S.J.C., Hill, H., Hails, J.E., Mullin, J.B., Barnett, S.J., Blackmore, G.W., and Dosser, O.D., (to be published in J. Vac. Sci. Technol. A, 1990).Google Scholar
2. Dreifus, D.L., PhD Thesis, North Carolina State University, 1989.Google Scholar
3. Dreifus, D.L., Kolbas, R.M., Sneed, B.P., and Schetzina, J.F., (to be published in Mat. Res. Soc. Proc. 1989).Google Scholar
4. Dreifus, D.L., Kolbas, R.M., Han, J.W., Cook, J.W. Jr., and Schetzina, J.F., (to be published in J. Vac. Sci. Technol. A., 1990).Google Scholar
5. Lansari, Y., Yang, Z., Hwang, S., Cook, J.W. Jr., and Schetzina, J.F., (to be published in Mat. Res. Soc. Proc. 1989).Google Scholar