II-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.