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Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

  • D.L. Dreifus (a1), Y. Lansari (a2), J.W. Han (a2), S. Hwang (a2), J.W. Cook (a2) and J.F. Schetzina (a2)...

Abstract

II-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

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1. Irvine, S.J.C., Hill, H., Hails, J.E., Mullin, J.B., Barnett, S.J., Blackmore, G.W., and Dosser, O.D., (to be published in J. Vac. Sci. Technol. A, 1990).
2. Dreifus, D.L., PhD Thesis, North Carolina State University, 1989.
3. Dreifus, D.L., Kolbas, R.M., Sneed, B.P., and Schetzina, J.F., (to be published in Mat. Res. Soc. Proc. 1989).
4. Dreifus, D.L., Kolbas, R.M., Han, J.W., Cook, J.W. Jr., and Schetzina, J.F., (to be published in J. Vac. Sci. Technol. A., 1990).
5. Lansari, Y., Yang, Z., Hwang, S., Cook, J.W. Jr., and Schetzina, J.F., (to be published in Mat. Res. Soc. Proc. 1989).

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

  • D.L. Dreifus (a1), Y. Lansari (a2), J.W. Han (a2), S. Hwang (a2), J.W. Cook (a2) and J.F. Schetzina (a2)...

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