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Properties of Modulation-Doped HgCdTe Superlattices

  • S. Hwang (a1), Z. Yang (a1), Y. Lansari (a1), J.W. Han (a1), J.W. Cook (a1), N.C. Giles (a1) and J.F. Schetzina (a1)...

Abstract

Photoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

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Properties of Modulation-Doped HgCdTe Superlattices

  • S. Hwang (a1), Z. Yang (a1), Y. Lansari (a1), J.W. Han (a1), J.W. Cook (a1), N.C. Giles (a1) and J.F. Schetzina (a1)...

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