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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

  • Zhonghai Yu (a1), M.A.L. Johnson (a1), J.D. Brown (a1), N.A. El-Masry (a2), J. F. Muth (a1), J.W. Cook (a1), J.F. Schetzina (a1), K.W. Haberern (a3), H.S. Kong (a3) and J.A. Edmond (a3)...

Abstract

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G4.3 (1999)

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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

  • Zhonghai Yu (a1), M.A.L. Johnson (a1), J.D. Brown (a1), N.A. El-Masry (a2), J. F. Muth (a1), J.W. Cook (a1), J.F. Schetzina (a1), K.W. Haberern (a3), H.S. Kong (a3) and J.A. Edmond (a3)...

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