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MBE Growth and Characterization of Small Band Gap HgTe-HgCdTe Superlattices.

  • Y. Lansari (a1), Z. Yang (a1), S. Hwang (a1), J.W. Cook (a1) and J.F. Schetzina (a1)...

Abstract

A series of modulation-doped small-band-gap HgTe-Hg1−xCdxTe superlattices (SLs) have been grown by photoassisted MBE. N-type or p-type conductivity was obtained in the modulation-doped samples by incorporating either In or As dopant atoms in the barrier layers, respectively. The electrical and optical properties that these new multilayered quantum well structures display will be discussed.

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MBE Growth and Characterization of Small Band Gap HgTe-HgCdTe Superlattices.

  • Y. Lansari (a1), Z. Yang (a1), S. Hwang (a1), J.W. Cook (a1) and J.F. Schetzina (a1)...

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