5 results
Homo-epitaxial growth on misoriented GaN substrates by MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 425-431
- Print publication:
- 2000
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- Article
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Highly Chemical Reactive Ion Etching of Gallium Nitride
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 894-900
- Print publication:
- 2000
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Highly Chemical Reactive Ion Etching of Gallium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.76
- Print publication:
- 1999
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Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W6.3
- Print publication:
- 1999
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Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching
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- Journal:
- Journal of Materials Research / Volume 5 / Issue 5 / May 1990
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1042-1051
- Print publication:
- May 1990
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