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Highly Chemical Reactive Ion Etching of Gallium Nitride

  • F. Karouta (a1), B. Jacobs (a1), I. Moerman (a2), K. Jacobs (a2), J.L. Weyher (a3), S. Porowski (a3), R. Crane (a4) and P.R. Hageman (a4)...

Abstract

: A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.

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Highly Chemical Reactive Ion Etching of Gallium Nitride

  • F. Karouta (a1), B. Jacobs (a1), I. Moerman (a2), K. Jacobs (a2), J.L. Weyher (a3), S. Porowski (a3), R. Crane (a4) and P.R. Hageman (a4)...

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