4 results
An Inequality for the Block-Partitioned Inverse
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- Journal:
- Econometric Theory / Volume 7 / Issue 4 / December 1991
- Published online by Cambridge University Press:
- 11 February 2009, p. 543
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Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1090 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1090-Z05-24
- Print publication:
- 2008
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Lateral/vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D05-02
- Print publication:
- 2008
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Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-20
- Print publication:
- 2008
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