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Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces

  • Mark E. Twigg (a1), Yoosuf N. Picard (a2), Joshua D. Caldwell (a3), Charles R. Eddy (a4), Philip G. Neudeck (a5), Andrew J. Trunek (a6) and J. Anthony Powell (a7)...


The interpretation of ECCI images in the forescattered geometry presents a more complex diffraction configuration than that encountered in the backscattered geometry. Determining the Kikuchi line that is the primary source of image intensity often requires more than simple inspection of the electron-channeling pattern. This problem can be addressed, however, by comparing recorded ECCI images of threading screw dislocations in 4H-SiC with simulated images. An ECCI image of this dislocation is found to give the orientation of the dominant Kikuchi line, greatly simplifying the determination of the diffraction simulation. In addition, computed images of threading screw dislocations in 4H-SiC were found to exhibit channeling contrast essentially identical to that obtained experimentally by ECCI and allowing determination of the dislocation Burgers vector.



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